Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots
We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those w...
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| Veröffentlicht in: | arXiv.org 2011-04 |
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| creator | Dimastrodonato, Valeria Mereni, Lorenzo O Young, Robert J Pelucchi, Emanuele |
| description | We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. |
| doi_str_mv | 10.48550/arxiv.1104.0520 |
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| subjects | Epitaxial growth High vacuum Indium gallium arsenides Metalorganic chemical vapor deposition Molecular beam epitaxy Physics - Materials Science Purity Quantum dots Substrates |
| title | Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots |
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