Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation...
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| creator | Saucer, T W J -E Lee Martin, A J Tien, D Millunchick, J M Sih, V |
| description | We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density. |
| doi_str_mv | 10.48550/arxiv.1012.3710 |
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| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1012_3710</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2086342596</sourcerecordid><originalsourceid>FETCH-LOGICAL-a516-50c5397bcdd217448eb504467295f62cc0a617b21320d7ea8947ab54053241d63</originalsourceid><addsrcrecordid>eNotj81rwkAUxJdCoWK991QCPUffvv1KjiKtFYSW4j28bFYaGxPd3Uj97xu1p4GZYZgfY08cpjJTCmbkf-vTlAPHqTAc7tgIheBpJhEf2CSEHQCgNqiUGLGvz-8udk2_r1sXrGutS7ptcqAYnW9dlZD3dA4X7-R8rC01zTkJkezPEK7aeZgtaR6SY09t7PdJ1cXwyO631AQ3-dcx27y9bhbv6fpjuVrM1ykprlMFVonclLaqkBspM1cqkHL4lautRmuBNDclcoFQGUdZLg2VSoISKHmlxZg932avvMXB13vy5-LCXVy4h8LLrXDw3bF3IRa7rvftcKlAyLSQqHIt_gCLfFoO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2086342596</pqid></control><display><type>article</type><title>Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Saucer, T W ; J -E Lee ; Martin, A J ; Tien, D ; Millunchick, J M ; Sih, V</creator><creatorcontrib>Saucer, T W ; J -E Lee ; Martin, A J ; Tien, D ; Millunchick, J M ; Sih, V</creatorcontrib><description>We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1012.3710</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Arrays ; Emission ; Epitaxial growth ; Ion beams ; Molecular beam epitaxy ; Nucleation ; Periodic variations ; Photoluminescence ; Physics - Materials Science ; Quantum dots</subject><ispartof>arXiv.org, 2010-12</ispartof><rights>2010. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1012.3710$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1016/j.ssc.2010.12.020$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Saucer, T W</creatorcontrib><creatorcontrib>J -E Lee</creatorcontrib><creatorcontrib>Martin, A J</creatorcontrib><creatorcontrib>Tien, D</creatorcontrib><creatorcontrib>Millunchick, J M</creatorcontrib><creatorcontrib>Sih, V</creatorcontrib><title>Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots</title><title>arXiv.org</title><description>We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.</description><subject>Arrays</subject><subject>Emission</subject><subject>Epitaxial growth</subject><subject>Ion beams</subject><subject>Molecular beam epitaxy</subject><subject>Nucleation</subject><subject>Periodic variations</subject><subject>Photoluminescence</subject><subject>Physics - Materials Science</subject><subject>Quantum dots</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj81rwkAUxJdCoWK991QCPUffvv1KjiKtFYSW4j28bFYaGxPd3Uj97xu1p4GZYZgfY08cpjJTCmbkf-vTlAPHqTAc7tgIheBpJhEf2CSEHQCgNqiUGLGvz-8udk2_r1sXrGutS7ptcqAYnW9dlZD3dA4X7-R8rC01zTkJkezPEK7aeZgtaR6SY09t7PdJ1cXwyO631AQ3-dcx27y9bhbv6fpjuVrM1ykprlMFVonclLaqkBspM1cqkHL4lautRmuBNDclcoFQGUdZLg2VSoISKHmlxZg932avvMXB13vy5-LCXVy4h8LLrXDw3bF3IRa7rvftcKlAyLSQqHIt_gCLfFoO</recordid><startdate>20101216</startdate><enddate>20101216</enddate><creator>Saucer, T W</creator><creator>J -E Lee</creator><creator>Martin, A J</creator><creator>Tien, D</creator><creator>Millunchick, J M</creator><creator>Sih, V</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20101216</creationdate><title>Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots</title><author>Saucer, T W ; J -E Lee ; Martin, A J ; Tien, D ; Millunchick, J M ; Sih, V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a516-50c5397bcdd217448eb504467295f62cc0a617b21320d7ea8947ab54053241d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Arrays</topic><topic>Emission</topic><topic>Epitaxial growth</topic><topic>Ion beams</topic><topic>Molecular beam epitaxy</topic><topic>Nucleation</topic><topic>Periodic variations</topic><topic>Photoluminescence</topic><topic>Physics - Materials Science</topic><topic>Quantum dots</topic><toplevel>online_resources</toplevel><creatorcontrib>Saucer, T W</creatorcontrib><creatorcontrib>J -E Lee</creatorcontrib><creatorcontrib>Martin, A J</creatorcontrib><creatorcontrib>Tien, D</creatorcontrib><creatorcontrib>Millunchick, J M</creatorcontrib><creatorcontrib>Sih, V</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saucer, T W</au><au>J -E Lee</au><au>Martin, A J</au><au>Tien, D</au><au>Millunchick, J M</au><au>Sih, V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots</atitle><jtitle>arXiv.org</jtitle><date>2010-12-16</date><risdate>2010</risdate><eissn>2331-8422</eissn><abstract>We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1012.3710</doi><oa>free_for_read</oa></addata></record> |
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| source | arXiv.org; Free E- Journals |
| subjects | Arrays Emission Epitaxial growth Ion beams Molecular beam epitaxy Nucleation Periodic variations Photoluminescence Physics - Materials Science Quantum dots |
| title | Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots |
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