Shot noise measurements in a wide-channel transistor near pinch-off

We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition noise. The dependence of the noise spectral density...

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Veröffentlicht in:	arXiv.org 2010-08
Hauptverfasser:	Khrapai, V S, Shovkun, D V
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductors Dependence Low currents Noise Partitions Physics - Mesoscale and Nanoscale Physics Shot noise Transistors Variations
Online-Zugang:	Volltext
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