Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure
We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectric...
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| creator | Coh, Sinisa Heeg, Tassilo Haeni, J H Biegalski, M D Lettieri, J Edge, L F O'Brien, K E Reiche, P Uecker, R Trolier-McKinstry, S Schlom, Darrell G Vanderbilt, David |
| description | We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered. |
| doi_str_mv | 10.48550/arxiv.1005.2767 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1005_2767</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2087078589</sourcerecordid><originalsourceid>FETCH-LOGICAL-a519-472d887862cf4c4c9a7b55641574d7fba775b7c35e631311ed6cd99b8dd3a07a3</originalsourceid><addsrcrecordid>eNotj0tLAzEYRYMgWGr3riTgemqe82WWUnxhQdHuh0yScVLnZZKp-u9trau7OVzOQeiCkqVQUpJrHb79bkkJkUsGOZygGeOcZkowdoYWMW4JISwHJiWfodc3n5mhG3XyVeuw0b31VicXcT0E3Pj3JnvC1rvWmRS8ifjLpwanxuGXqu_w6MKwix8-ORxTmEyagjtHp7Vuo1v87xxt7m43q4ds_Xz_uLpZZ1rSIhPArFKgcmZqYYQpNFRS5oJKEBbqSgPICgyXLueUU-psbmxRVMpargloPkeXx9u_3nIMvtPhpzx0l4fuPXB1BMYwfE4upnI7TKHfK5WMKCCgpCr4L7qPWzI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2087078589</pqid></control><display><type>article</type><title>Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Coh, Sinisa ; Heeg, Tassilo ; Haeni, J H ; Biegalski, M D ; Lettieri, J ; Edge, L F ; O'Brien, K E ; Reiche, P ; Uecker, R ; Trolier-McKinstry, S ; Schlom, Darrell G ; Vanderbilt, David</creator><creatorcontrib>Coh, Sinisa ; Heeg, Tassilo ; Haeni, J H ; Biegalski, M D ; Lettieri, J ; Edge, L F ; O'Brien, K E ; Reiche, P ; Uecker, R ; Trolier-McKinstry, S ; Schlom, Darrell G ; Vanderbilt, David</creatorcontrib><description>We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1005.2767</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Crystal structure ; Dielectrics ; First principles ; Lattice vibration ; Mathematical analysis ; Perovskite structure ; Perovskites ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Silicon ; Tensors</subject><ispartof>arXiv.org, 2010-08</ispartof><rights>2010. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.82.064101$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1005.2767$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Coh, Sinisa</creatorcontrib><creatorcontrib>Heeg, Tassilo</creatorcontrib><creatorcontrib>Haeni, J H</creatorcontrib><creatorcontrib>Biegalski, M D</creatorcontrib><creatorcontrib>Lettieri, J</creatorcontrib><creatorcontrib>Edge, L F</creatorcontrib><creatorcontrib>O'Brien, K E</creatorcontrib><creatorcontrib>Reiche, P</creatorcontrib><creatorcontrib>Uecker, R</creatorcontrib><creatorcontrib>Trolier-McKinstry, S</creatorcontrib><creatorcontrib>Schlom, Darrell G</creatorcontrib><creatorcontrib>Vanderbilt, David</creatorcontrib><title>Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure</title><title>arXiv.org</title><description>We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.</description><subject>Crystal structure</subject><subject>Dielectrics</subject><subject>First principles</subject><subject>Lattice vibration</subject><subject>Mathematical analysis</subject><subject>Perovskite structure</subject><subject>Perovskites</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Silicon</subject><subject>Tensors</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotj0tLAzEYRYMgWGr3riTgemqe82WWUnxhQdHuh0yScVLnZZKp-u9trau7OVzOQeiCkqVQUpJrHb79bkkJkUsGOZygGeOcZkowdoYWMW4JISwHJiWfodc3n5mhG3XyVeuw0b31VicXcT0E3Pj3JnvC1rvWmRS8ifjLpwanxuGXqu_w6MKwix8-ORxTmEyagjtHp7Vuo1v87xxt7m43q4ds_Xz_uLpZZ1rSIhPArFKgcmZqYYQpNFRS5oJKEBbqSgPICgyXLueUU-psbmxRVMpargloPkeXx9u_3nIMvtPhpzx0l4fuPXB1BMYwfE4upnI7TKHfK5WMKCCgpCr4L7qPWzI</recordid><startdate>20100803</startdate><enddate>20100803</enddate><creator>Coh, Sinisa</creator><creator>Heeg, Tassilo</creator><creator>Haeni, J H</creator><creator>Biegalski, M D</creator><creator>Lettieri, J</creator><creator>Edge, L F</creator><creator>O'Brien, K E</creator><creator>Reiche, P</creator><creator>Uecker, R</creator><creator>Trolier-McKinstry, S</creator><creator>Schlom, Darrell G</creator><creator>Vanderbilt, David</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20100803</creationdate><title>Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure</title><author>Coh, Sinisa ; Heeg, Tassilo ; Haeni, J H ; Biegalski, M D ; Lettieri, J ; Edge, L F ; O'Brien, K E ; Reiche, P ; Uecker, R ; Trolier-McKinstry, S ; Schlom, Darrell G ; Vanderbilt, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a519-472d887862cf4c4c9a7b55641574d7fba775b7c35e631311ed6cd99b8dd3a07a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Crystal structure</topic><topic>Dielectrics</topic><topic>First principles</topic><topic>Lattice vibration</topic><topic>Mathematical analysis</topic><topic>Perovskite structure</topic><topic>Perovskites</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Silicon</topic><topic>Tensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Coh, Sinisa</creatorcontrib><creatorcontrib>Heeg, Tassilo</creatorcontrib><creatorcontrib>Haeni, J H</creatorcontrib><creatorcontrib>Biegalski, M D</creatorcontrib><creatorcontrib>Lettieri, J</creatorcontrib><creatorcontrib>Edge, L F</creatorcontrib><creatorcontrib>O'Brien, K E</creatorcontrib><creatorcontrib>Reiche, P</creatorcontrib><creatorcontrib>Uecker, R</creatorcontrib><creatorcontrib>Trolier-McKinstry, S</creatorcontrib><creatorcontrib>Schlom, Darrell G</creatorcontrib><creatorcontrib>Vanderbilt, David</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Coh, Sinisa</au><au>Heeg, Tassilo</au><au>Haeni, J H</au><au>Biegalski, M D</au><au>Lettieri, J</au><au>Edge, L F</au><au>O'Brien, K E</au><au>Reiche, P</au><au>Uecker, R</au><au>Trolier-McKinstry, S</au><au>Schlom, Darrell G</au><au>Vanderbilt, David</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure</atitle><jtitle>arXiv.org</jtitle><date>2010-08-03</date><risdate>2010</risdate><eissn>2331-8422</eissn><abstract>We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1005.2767</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Crystal structure Dielectrics First principles Lattice vibration Mathematical analysis Perovskite structure Perovskites Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Silicon Tensors |
| title | Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure |
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