Ultra-dense phosphorus in germanium delta-doped layers
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and ele...
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| creator | Scappucci, G Capellini, G Lee, W C T Simmons, M Y |
| description | Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors. |
| doi_str_mv | 10.48550/arxiv.0912.0751 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_0912_0751</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2086322144</sourcerecordid><originalsourceid>FETCH-LOGICAL-a514-fc54481ea77b9ddc53fe1f1a50c8598bbf90878c53efb84d4422980a590f5a3b3</originalsourceid><addsrcrecordid>eNotj0tLxDAUhYMgOIyzdyUF16k3j9smSxl8wYCbcV3SJtEOfZm04vx7M46Lw4XDx-V8hNwwyKVChHsTftrvHDTjOZTILsiKC8GokpxfkU2MBwDgRckRxYoU790cDLVuiC6bPseYEpaYtUP24UJvhnbpM-u6OTHj5GzWmaML8ZpcetNFt_m_a7J_etxvX-ju7fl1-7CjBpmkvkEpFXOmLGttbYPCO-aZQWgUalXXXoMqVeqdr5W0Mk3UCgxq8GhELdbk9vz2z6maQtubcKxObtXJLQF3Z2AK49fi4lwdxiUMaVLFQRWCcyal-AXvqVEX</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2086322144</pqid></control><display><type>article</type><title>Ultra-dense phosphorus in germanium delta-doped layers</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Scappucci, G ; Capellini, G ; Lee, W C T ; Simmons, M Y</creator><creatorcontrib>Scappucci, G ; Capellini, G ; Lee, W C T ; Simmons, M Y</creatorcontrib><description>Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0912.0751</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Atomic properties ; Carrier density ; Diffusion layers ; Field effect transistors ; Germanium ; High vacuum ; Molecular beam epitaxy ; Phosphorus ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Semiconductor devices</subject><ispartof>arXiv.org, 2009-12</ispartof><rights>2009. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,778,782,883,27908</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.0912.0751$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1063/1.3123391$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Scappucci, G</creatorcontrib><creatorcontrib>Capellini, G</creatorcontrib><creatorcontrib>Lee, W C T</creatorcontrib><creatorcontrib>Simmons, M Y</creatorcontrib><title>Ultra-dense phosphorus in germanium delta-doped layers</title><title>arXiv.org</title><description>Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.</description><subject>Atomic properties</subject><subject>Carrier density</subject><subject>Diffusion layers</subject><subject>Field effect transistors</subject><subject>Germanium</subject><subject>High vacuum</subject><subject>Molecular beam epitaxy</subject><subject>Phosphorus</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Semiconductor devices</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj0tLxDAUhYMgOIyzdyUF16k3j9smSxl8wYCbcV3SJtEOfZm04vx7M46Lw4XDx-V8hNwwyKVChHsTftrvHDTjOZTILsiKC8GokpxfkU2MBwDgRckRxYoU790cDLVuiC6bPseYEpaYtUP24UJvhnbpM-u6OTHj5GzWmaML8ZpcetNFt_m_a7J_etxvX-ju7fl1-7CjBpmkvkEpFXOmLGttbYPCO-aZQWgUalXXXoMqVeqdr5W0Mk3UCgxq8GhELdbk9vz2z6maQtubcKxObtXJLQF3Z2AK49fi4lwdxiUMaVLFQRWCcyal-AXvqVEX</recordid><startdate>20091203</startdate><enddate>20091203</enddate><creator>Scappucci, G</creator><creator>Capellini, G</creator><creator>Lee, W C T</creator><creator>Simmons, M Y</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20091203</creationdate><title>Ultra-dense phosphorus in germanium delta-doped layers</title><author>Scappucci, G ; Capellini, G ; Lee, W C T ; Simmons, M Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a514-fc54481ea77b9ddc53fe1f1a50c8598bbf90878c53efb84d4422980a590f5a3b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atomic properties</topic><topic>Carrier density</topic><topic>Diffusion layers</topic><topic>Field effect transistors</topic><topic>Germanium</topic><topic>High vacuum</topic><topic>Molecular beam epitaxy</topic><topic>Phosphorus</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Semiconductor devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Scappucci, G</creatorcontrib><creatorcontrib>Capellini, G</creatorcontrib><creatorcontrib>Lee, W C T</creatorcontrib><creatorcontrib>Simmons, M Y</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Scappucci, G</au><au>Capellini, G</au><au>Lee, W C T</au><au>Simmons, M Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-dense phosphorus in germanium delta-doped layers</atitle><jtitle>arXiv.org</jtitle><date>2009-12-03</date><risdate>2009</risdate><eissn>2331-8422</eissn><abstract>Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0912.0751</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Atomic properties Carrier density Diffusion layers Field effect transistors Germanium High vacuum Molecular beam epitaxy Phosphorus Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Semiconductor devices |
| title | Ultra-dense phosphorus in germanium delta-doped layers |
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