Carrier thermal escape in families of InAs/InP self-assembled quantum dots

We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of car...

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Veröffentlicht in:	arXiv.org 2009-10
Hauptverfasser:	Gélinas, Guillaume, Lanacer, Ali, Leonelli, Richard, Masut, Remo A, Raymond, Sylvain, Poole, Philip J
Format:	Artikel
Sprache:	eng
Schlagworte:	Indium phosphides Photoluminescence Physics - Mesoscale and Nanoscale Physics Quantum dots Radiative recombination Self-assembly Temperature dependence Thermal emission Wetting
Online-Zugang:	Volltext
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