Carrier thermal escape in families of InAs/InP self-assembled quantum dots
We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of car...
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| creator | Gélinas, Guillaume Lanacer, Ali Leonelli, Richard Masut, Remo A Raymond, Sylvain Poole, Philip J |
| description | We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs. |
| doi_str_mv | 10.48550/arxiv.0910.0480 |
| format | Article |
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The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. 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This indicates that electron and holes exit the InAs quantum dots as correlated pairs.</description><subject>Indium phosphides</subject><subject>Photoluminescence</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Quantum dots</subject><subject>Radiative recombination</subject><subject>Self-assembly</subject><subject>Temperature dependence</subject><subject>Thermal emission</subject><subject>Wetting</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj8tqwzAUREWh0JBm31URdO1EupJseRlCHy6BdpG9kewrquBXJLu0f18n6WpgOAxzCHngbC21Umxjwo__XrN8LpjU7IYsQAieaAlwR1YxHhljkGaglFiQ950JwWOg4xeG1jQUY2UGpL6jzrS-8Rhp72jRbeOm6D5pxMYlJkZsbYM1PU2mG6eW1v0Y78mtM03E1X8uyeHl-bB7S_Yfr8Vuu0-M4jqpQaQcNYLBFG3t0ppnlbDcSl2h5poJdMrmIK0FkFkmK20yjbnDGsBVQizJ43X24lkOwbcm_JZn3_LsOwNPV2AI_WnCOJbHfgrdfKkEpkGB4kKLPzVWWCs</recordid><startdate>20091002</startdate><enddate>20091002</enddate><creator>Gélinas, Guillaume</creator><creator>Lanacer, Ali</creator><creator>Leonelli, Richard</creator><creator>Masut, Remo A</creator><creator>Raymond, Sylvain</creator><creator>Poole, Philip J</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20091002</creationdate><title>Carrier thermal escape in families of InAs/InP self-assembled quantum dots</title><author>Gélinas, Guillaume ; Lanacer, Ali ; Leonelli, Richard ; Masut, Remo A ; Raymond, Sylvain ; Poole, Philip J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a518-d2361e8e2ae6ebdf6d17c3b1b48ce81803ef5b924bb224774c8a78e9fed22fc33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Indium phosphides</topic><topic>Photoluminescence</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Quantum dots</topic><topic>Radiative recombination</topic><topic>Self-assembly</topic><topic>Temperature dependence</topic><topic>Thermal emission</topic><topic>Wetting</topic><toplevel>online_resources</toplevel><creatorcontrib>Gélinas, Guillaume</creatorcontrib><creatorcontrib>Lanacer, Ali</creatorcontrib><creatorcontrib>Leonelli, Richard</creatorcontrib><creatorcontrib>Masut, Remo A</creatorcontrib><creatorcontrib>Raymond, Sylvain</creatorcontrib><creatorcontrib>Poole, Philip J</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gélinas, Guillaume</au><au>Lanacer, Ali</au><au>Leonelli, Richard</au><au>Masut, Remo A</au><au>Raymond, Sylvain</au><au>Poole, Philip J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier thermal escape in families of InAs/InP self-assembled quantum dots</atitle><jtitle>arXiv.org</jtitle><date>2009-10-02</date><risdate>2009</risdate><eissn>2331-8422</eissn><abstract>We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. 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| subjects | Indium phosphides Photoluminescence Physics - Mesoscale and Nanoscale Physics Quantum dots Radiative recombination Self-assembly Temperature dependence Thermal emission Wetting |
| title | Carrier thermal escape in families of InAs/InP self-assembled quantum dots |
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