Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection
IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct 2009 We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin c...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Erve, Olaf M. J. van "t Awo-Affouda, Chaffra Hanbicki, Aubrey T Li, Connie H Thompson, Phillip E Jonker, Berend T |
| description | IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct
2009 We demonstrate that information can be transmitted and processed with pure
spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce
significant electron spin polarization in the silicon, generating a spin
current which flows outside of the charge current path. The spin orientation of
this pure spin current is controlled in one of three ways: (a) by switching the
magnetization of the Fe contact, (b) by changing the polarity of the bias on
the Fe/Al2O3 (injector) contact, which enables the generation of either
majority or minority spin populations in the Si, providing a way to
electrically manipulate the injected spin orientation without changing the
magnetization of the contact itself, and (c) by inducing spin precession
through application of a small perpendicular magnetic field. Spin polarization
by electrical extraction is as effective as that achieved by the more common
electrical spin injection. The output characteristics of a planar silicon three
terminal device are very similar to those of non-volatile giant
magnetoresistance metal spin-valve structures |
| doi_str_mv | 10.48550/arxiv.0906.5597 |
| format | Article |
| fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_0906_5597</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>0906_5597</sourcerecordid><originalsourceid>FETCH-LOGICAL-a657-4af29ab580f0483698f62489c8bda25908b0e443c146d332e082fba74293517b3</originalsourceid><addsrcrecordid>eNotj8tOhDAYhbtxYUb3rkwfQLD0Aq07g6OSjHGSmT35C63WMAVL0fHtFZnVOcm5JB9CVxlJuRSC3EI4uq-UKJKnQqjiHH1W3vbhANH1Hm9D35hxdP4Nf7v4jrdTMHg3OI_LKQTj44j__M51run93ZJU_sM08_oGr48xwMm_gHfD1C2_4Fv8YOLSu0BnFrrRXJ50hfaP6335nGxen6ryfpNALoqEg6UKtJDEEi5ZrqTNKZeqkboFKhSRmhjOWZPxvGWMGiKp1VBwqpjICs1W6Hq5_Ueuh-AOEH7qGb2e0dkvtm5UqA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection</title><source>arXiv.org</source><creator>Erve, Olaf M. J. van "t ; Awo-Affouda, Chaffra ; Hanbicki, Aubrey T ; Li, Connie H ; Thompson, Phillip E ; Jonker, Berend T</creator><creatorcontrib>Erve, Olaf M. J. van "t ; Awo-Affouda, Chaffra ; Hanbicki, Aubrey T ; Li, Connie H ; Thompson, Phillip E ; Jonker, Berend T</creatorcontrib><description>IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct
2009 We demonstrate that information can be transmitted and processed with pure
spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce
significant electron spin polarization in the silicon, generating a spin
current which flows outside of the charge current path. The spin orientation of
this pure spin current is controlled in one of three ways: (a) by switching the
magnetization of the Fe contact, (b) by changing the polarity of the bias on
the Fe/Al2O3 (injector) contact, which enables the generation of either
majority or minority spin populations in the Si, providing a way to
electrically manipulate the injected spin orientation without changing the
magnetization of the contact itself, and (c) by inducing spin precession
through application of a small perpendicular magnetic field. Spin polarization
by electrical extraction is as effective as that achieved by the more common
electrical spin injection. The output characteristics of a planar silicon three
terminal device are very similar to those of non-volatile giant
magnetoresistance metal spin-valve structures</description><identifier>DOI: 10.48550/arxiv.0906.5597</identifier><language>eng</language><subject>Physics - Materials Science ; Physics - Other Condensed Matter</subject><creationdate>2009-06</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,881</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/0906.5597$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.0906.5597$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Erve, Olaf M. J. van "t</creatorcontrib><creatorcontrib>Awo-Affouda, Chaffra</creatorcontrib><creatorcontrib>Hanbicki, Aubrey T</creatorcontrib><creatorcontrib>Li, Connie H</creatorcontrib><creatorcontrib>Thompson, Phillip E</creatorcontrib><creatorcontrib>Jonker, Berend T</creatorcontrib><title>Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection</title><description>IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct
2009 We demonstrate that information can be transmitted and processed with pure
spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce
significant electron spin polarization in the silicon, generating a spin
current which flows outside of the charge current path. The spin orientation of
this pure spin current is controlled in one of three ways: (a) by switching the
magnetization of the Fe contact, (b) by changing the polarity of the bias on
the Fe/Al2O3 (injector) contact, which enables the generation of either
majority or minority spin populations in the Si, providing a way to
electrically manipulate the injected spin orientation without changing the
magnetization of the contact itself, and (c) by inducing spin precession
through application of a small perpendicular magnetic field. Spin polarization
by electrical extraction is as effective as that achieved by the more common
electrical spin injection. The output characteristics of a planar silicon three
terminal device are very similar to those of non-volatile giant
magnetoresistance metal spin-valve structures</description><subject>Physics - Materials Science</subject><subject>Physics - Other Condensed Matter</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj8tOhDAYhbtxYUb3rkwfQLD0Aq07g6OSjHGSmT35C63WMAVL0fHtFZnVOcm5JB9CVxlJuRSC3EI4uq-UKJKnQqjiHH1W3vbhANH1Hm9D35hxdP4Nf7v4jrdTMHg3OI_LKQTj44j__M51run93ZJU_sM08_oGr48xwMm_gHfD1C2_4Fv8YOLSu0BnFrrRXJ50hfaP6335nGxen6ryfpNALoqEg6UKtJDEEi5ZrqTNKZeqkboFKhSRmhjOWZPxvGWMGiKp1VBwqpjICs1W6Hq5_Ueuh-AOEH7qGb2e0dkvtm5UqA</recordid><startdate>20090630</startdate><enddate>20090630</enddate><creator>Erve, Olaf M. J. van "t</creator><creator>Awo-Affouda, Chaffra</creator><creator>Hanbicki, Aubrey T</creator><creator>Li, Connie H</creator><creator>Thompson, Phillip E</creator><creator>Jonker, Berend T</creator><scope>GOX</scope></search><sort><creationdate>20090630</creationdate><title>Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection</title><author>Erve, Olaf M. J. van "t ; Awo-Affouda, Chaffra ; Hanbicki, Aubrey T ; Li, Connie H ; Thompson, Phillip E ; Jonker, Berend T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a657-4af29ab580f0483698f62489c8bda25908b0e443c146d332e082fba74293517b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Physics - Materials Science</topic><topic>Physics - Other Condensed Matter</topic><toplevel>online_resources</toplevel><creatorcontrib>Erve, Olaf M. J. van "t</creatorcontrib><creatorcontrib>Awo-Affouda, Chaffra</creatorcontrib><creatorcontrib>Hanbicki, Aubrey T</creatorcontrib><creatorcontrib>Li, Connie H</creatorcontrib><creatorcontrib>Thompson, Phillip E</creatorcontrib><creatorcontrib>Jonker, Berend T</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Erve, Olaf M. J. van "t</au><au>Awo-Affouda, Chaffra</au><au>Hanbicki, Aubrey T</au><au>Li, Connie H</au><au>Thompson, Phillip E</au><au>Jonker, Berend T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection</atitle><date>2009-06-30</date><risdate>2009</risdate><abstract>IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct
2009 We demonstrate that information can be transmitted and processed with pure
spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce
significant electron spin polarization in the silicon, generating a spin
current which flows outside of the charge current path. The spin orientation of
this pure spin current is controlled in one of three ways: (a) by switching the
magnetization of the Fe contact, (b) by changing the polarity of the bias on
the Fe/Al2O3 (injector) contact, which enables the generation of either
majority or minority spin populations in the Si, providing a way to
electrically manipulate the injected spin orientation without changing the
magnetization of the contact itself, and (c) by inducing spin precession
through application of a small perpendicular magnetic field. Spin polarization
by electrical extraction is as effective as that achieved by the more common
electrical spin injection. The output characteristics of a planar silicon three
terminal device are very similar to those of non-volatile giant
magnetoresistance metal spin-valve structures</abstract><doi>10.48550/arxiv.0906.5597</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | DOI: 10.48550/arxiv.0906.5597 |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_arxiv_primary_0906_5597 |
| source | arXiv.org |
| subjects | Physics - Materials Science Physics - Other Condensed Matter |
| title | Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T04%3A11%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Information%20Processing%20with%20Pure%20Spin%20Currents%20in%20Silicon:%20Spin%20Injection,%20Extraction,%20Manipulation%20and%20Detection&rft.au=Erve,%20Olaf%20M.%20J.%20van%20%22t&rft.date=2009-06-30&rft_id=info:doi/10.48550/arxiv.0906.5597&rft_dat=%3Carxiv_GOX%3E0906_5597%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |