Boosting electronic transport in carbon nanotubes by isotopic disorder

The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of me...

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Veröffentlicht in:arXiv.org 2009-05
Hauptverfasser: Vandecasteele, Niels, Lazzeri, Michele, Mauri, Francesco
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Mauri, Francesco
description The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential-resistance. This is an extraordinary case where disorder improves the electronic transport.
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fullrecord <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_0905_3034</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2087801234</sourcerecordid><originalsourceid>FETCH-LOGICAL-a514-9cf89bdc00ea3fa8d8f12b582d0fadc4a8812ae9770d32553ad5c96fd5655d3f3</originalsourceid><addsrcrecordid>eNotj89LwzAYhoMgOObuniTgufVL0rTpUYdzwsDL7uVrfkjHTGqSivvv7Zyn9z08vLwPIXcMykpJCY8Yf4bvElqQpQBRXZEFF4IVquL8hqxSOgAArxsupViQzXMIKQ_-g9qj1TkGP2iaI_o0hpjp4KnG2AdPPfqQp94m2p_okEIO40yauUVj4y25dnhMdvWfS7LfvOzX22L3_vq2ftoVKFlVtNqptjcawKJwqIxyjPdScQMOja5QKcbRtk0DRpz_oZG6rZ2RtZRGOLEk95fZP8dujMMnxlN3du3OrjPwcAHGGL4mm3J3CFP086WOg2oUMD5Tv9FEWBU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2087801234</pqid></control><display><type>article</type><title>Boosting electronic transport in carbon nanotubes by isotopic disorder</title><source>Freely Accessible Journals</source><source>arXiv.org</source><creator>Vandecasteele, Niels ; Lazzeri, Michele ; Mauri, Francesco</creator><creatorcontrib>Vandecasteele, Niels ; Lazzeri, Michele ; Mauri, Francesco</creatorcontrib><description>The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential-resistance. This is an extraordinary case where disorder improves the electronic transport.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0905.3034</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Bias ; Carbon nanotubes ; Electron transport ; Nanotubes ; Phonons ; Physics - Materials Science</subject><ispartof>arXiv.org, 2009-05</ispartof><rights>2009. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,781,785,886,27929</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevLett.102.196801$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.0905.3034$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Vandecasteele, Niels</creatorcontrib><creatorcontrib>Lazzeri, Michele</creatorcontrib><creatorcontrib>Mauri, Francesco</creatorcontrib><title>Boosting electronic transport in carbon nanotubes by isotopic disorder</title><title>arXiv.org</title><description>The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential-resistance. This is an extraordinary case where disorder improves the electronic transport.</description><subject>Bias</subject><subject>Carbon nanotubes</subject><subject>Electron transport</subject><subject>Nanotubes</subject><subject>Phonons</subject><subject>Physics - Materials Science</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj89LwzAYhoMgOObuniTgufVL0rTpUYdzwsDL7uVrfkjHTGqSivvv7Zyn9z08vLwPIXcMykpJCY8Yf4bvElqQpQBRXZEFF4IVquL8hqxSOgAArxsupViQzXMIKQ_-g9qj1TkGP2iaI_o0hpjp4KnG2AdPPfqQp94m2p_okEIO40yauUVj4y25dnhMdvWfS7LfvOzX22L3_vq2ftoVKFlVtNqptjcawKJwqIxyjPdScQMOja5QKcbRtk0DRpz_oZG6rZ2RtZRGOLEk95fZP8dujMMnxlN3du3OrjPwcAHGGL4mm3J3CFP086WOg2oUMD5Tv9FEWBU</recordid><startdate>20090519</startdate><enddate>20090519</enddate><creator>Vandecasteele, Niels</creator><creator>Lazzeri, Michele</creator><creator>Mauri, Francesco</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20090519</creationdate><title>Boosting electronic transport in carbon nanotubes by isotopic disorder</title><author>Vandecasteele, Niels ; Lazzeri, Michele ; Mauri, Francesco</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a514-9cf89bdc00ea3fa8d8f12b582d0fadc4a8812ae9770d32553ad5c96fd5655d3f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Bias</topic><topic>Carbon nanotubes</topic><topic>Electron transport</topic><topic>Nanotubes</topic><topic>Phonons</topic><topic>Physics - Materials Science</topic><toplevel>online_resources</toplevel><creatorcontrib>Vandecasteele, Niels</creatorcontrib><creatorcontrib>Lazzeri, Michele</creatorcontrib><creatorcontrib>Mauri, Francesco</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vandecasteele, Niels</au><au>Lazzeri, Michele</au><au>Mauri, Francesco</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Boosting electronic transport in carbon nanotubes by isotopic disorder</atitle><jtitle>arXiv.org</jtitle><date>2009-05-19</date><risdate>2009</risdate><eissn>2331-8422</eissn><abstract>The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential-resistance. This is an extraordinary case where disorder improves the electronic transport.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0905.3034</doi><oa>free_for_read</oa></addata></record>
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subjects Bias
Carbon nanotubes
Electron transport
Nanotubes
Phonons
Physics - Materials Science
title Boosting electronic transport in carbon nanotubes by isotopic disorder
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