Gate-controlled non-volatile graphene-ferroelectric memory

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	arXiv.org 2009-04
Hauptverfasser:	Zheng, Yi, Guang-Xin Ni, Chee-Tat Toh, Ming-Gang Zeng, Shu-Ting, Chen, Yao, Kui, Ozyilmaz, Barbaros
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric dipoles Ferroelectric materials Ferroelectricity Graphene Graphical representations Low resistance Memory devices Physics - Mesoscale and Nanoscale Physics Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!