Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below-bandgap broadband far infrared radiation were investigated at 200 K and 80 K. Using a novel THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm^2, we observed carrier heating a...

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Veröffentlicht in:arXiv.org 2008-12
Hauptverfasser: Hoffmann, Matthias C, Hebling, Janos, Hwang, Harold Y, Ka-Lo Yeh, Nelson, Keith A
Format: Artikel
Sprache:eng
Schlagworte:
Broadband
Carrier density
Far infrared radiation
Hot electrons
Indium antimonide
Intermetallic compounds
Ionization
Physics - Materials Science
Physics - Other Condensed Matter
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Hebling, Janos
Hwang, Harold Y
Ka-Lo Yeh
Nelson, Keith A
description Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below-bandgap broadband far infrared radiation were investigated at 200 K and 80 K. Using a novel THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm^2, we observed carrier heating and impact ionization. The number of carriers produced exceeds 10^16 cm-3, corresponding to a change in carrier density Delta N/N of 700% at 80K. The onset of a well defined absorption peak at 1.2 THz is an indication of changes in LO and LA phonon populations due to cooling of the hot electrons.
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subjects Broadband
Carrier density
Far infrared radiation
Hot electrons
Indium antimonide
Intermetallic compounds
Ionization
Physics - Materials Science
Physics - Other Condensed Matter
title Impact ionization in InSb probed by THz-pump THz-probe spectroscopy
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