Kondo effects in a C_60 single-molecule transistor

Kondo effects in a C_60 single-molecule transistor

We have used the electromigration technique to fabricate a \(\rm{C_{{60}}}\) single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1...

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Veröffentlicht in:arXiv.org 2008-09
Hauptverfasser: Roch, N, Winkelmann, C B, Florens, S, Bouchiat, V, Wernsdorfer, W, Balestro, F
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Sprache:eng
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Electromigration
Electron spin
Electrons
Kondo effect
Physicists
Physics - Mesoscale and Nanoscale Physics
Transistors
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creator Roch, N
Winkelmann, C B
Florens, S
Bouchiat, V
Wernsdorfer, W
Balestro, F
description We have used the electromigration technique to fabricate a \(\rm{C_{{60}}}\) single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.
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subjects Electromigration
Electron spin
Electrons
Kondo effect
Physicists
Physics - Mesoscale and Nanoscale Physics
Transistors
title Kondo effects in a C_60 single-molecule transistor
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