Symmetry of standing waves generated by a point defect in epitaxial graphene

Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in an epitaxial graphene sample grown on silicon carbide substrate. This analysis allows us to extract the quasiparticle energy dispersion, and to give a first experimental proof of the valid...

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Veröffentlicht in:	arXiv.org 2008-07
Hauptverfasser:	Simon, L, Bena, C, Vonau, F, Aubel, D, Nasrallah, H, Habar, M, Perruchetti, J C
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Asymmetry Chirality Epitaxial growth Fermi liquids Fourier transforms Graphene Physics - Mesoscale and Nanoscale Physics Point defects Scanning tunneling microscopy Silicon carbide Silicon substrates Standing waves
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