Dense electron-hole plasma in silicon light emitting diodes
Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on the diode current and a low energy shift of the emission lin...
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| creator | Altukhov, P D Kuzminov, E G |
| description | Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on the diode current and a low energy shift of the emission line in electroluminescence spectra with increasing diode current are explained by the self-compression of injected electron-hole plasma into dense electron-hole plasma drops. Experiments on space scanning of the electroluminescence intensity of the diodes support this conclusion. The plasma self-compression is explained by existence of an attraction in electron-hole plasma, compensating the plasma pressure. A decrease of the semiconductor energy gap due to a local lattice overheating, produced by the plasma, and the exchange-correlation interaction could contribute to this attraction. The self-focusing of the injection current can accompany the plasma self-compression. |
| doi_str_mv | 10.48550/arxiv.0806.2050 |
| format | Article |
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High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on the diode current and a low energy shift of the emission line in electroluminescence spectra with increasing diode current are explained by the self-compression of injected electron-hole plasma into dense electron-hole plasma drops. Experiments on space scanning of the electroluminescence intensity of the diodes support this conclusion. The plasma self-compression is explained by existence of an attraction in electron-hole plasma, compensating the plasma pressure. A decrease of the semiconductor energy gap due to a local lattice overheating, produced by the plasma, and the exchange-correlation interaction could contribute to this attraction. 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| ispartof | arXiv.org, 2008-09 |
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| source | arXiv.org; Free E- Journals |
| subjects | Attraction Dependence Diodes Electroluminescence Electrons Emission spectra Energy gap Holes (electron deficiencies) Injection current Line spectra Organic light emitting diodes Overheating Physics - Other Condensed Matter Plasma Plasma pressure Quantum efficiency Silicon |
| title | Dense electron-hole plasma in silicon light emitting diodes |
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