Effects of current on nanoscale ring-shaped magnetic tunnel junctions
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of \(6\times 10^{6}\)A/cm\(^2\), the magnetization of the two magnetic rings can...
Gespeichert in:
Veröffentlicht in: | arXiv.org 2008-04 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | arXiv.org |
container_volume | |
creator | Hong-Xiang, Wei He, Jiexuan Zhen-Chao, Wen Xiu-Feng, Han Wen-Shan Zhan Zhang, Shufeng |
description | We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of \(6\times 10^{6}\)A/cm\(^2\), the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field. |
doi_str_mv | 10.48550/arxiv.0804.3524 |
format | Article |
fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_0804_3524</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2089836192</sourcerecordid><originalsourceid>FETCH-LOGICAL-a512-5525c932a52dcdde0cb61134f38615f7f0fda1efa56fb5001032c32ad17c68833</originalsourceid><addsrcrecordid>eNotj89LwzAYhoMgOObuniTgufXLl35tepRRf8DAy-4lS5PZ0qU1aUX_ezvn6b08vDwPY3cC0kwRwaMO3-1XCgqyVBJmV2yFUopEZYg3bBNjBwCYF0gkV6yqnLNminxw3MwhWD_xwXOv_RCN7i0PrT8m8UOPtuEnffR2ag2fZu9tz7vZm6kdfLxl10730W7-d832z9V--5rs3l_etk-7RJPAhAjJlBI1YWOaxoI55ELIzEmVC3KFA9doYZ2m3B0IQIBEs-CNKEyulJRrdn-5_Uusx9CedPipz6n1OXUBHi7AGIbP2cap7oY5-EWpRlClkrkoUf4Cis1WXQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2089836192</pqid></control><display><type>article</type><title>Effects of current on nanoscale ring-shaped magnetic tunnel junctions</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Hong-Xiang, Wei ; He, Jiexuan ; Zhen-Chao, Wen ; Xiu-Feng, Han ; Wen-Shan Zhan ; Zhang, Shufeng</creator><creatorcontrib>Hong-Xiang, Wei ; He, Jiexuan ; Zhen-Chao, Wen ; Xiu-Feng, Han ; Wen-Shan Zhan ; Zhang, Shufeng</creatorcontrib><description>We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of \(6\times 10^{6}\)A/cm\(^2\), the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0804.3524</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Electrical junctions ; Magnetic switching ; Magnetization ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Tunnel junctions</subject><ispartof>arXiv.org, 2008-04</ispartof><rights>2008. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.0804.3524$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.77.134432$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Hong-Xiang, Wei</creatorcontrib><creatorcontrib>He, Jiexuan</creatorcontrib><creatorcontrib>Zhen-Chao, Wen</creatorcontrib><creatorcontrib>Xiu-Feng, Han</creatorcontrib><creatorcontrib>Wen-Shan Zhan</creatorcontrib><creatorcontrib>Zhang, Shufeng</creatorcontrib><title>Effects of current on nanoscale ring-shaped magnetic tunnel junctions</title><title>arXiv.org</title><description>We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of \(6\times 10^{6}\)A/cm\(^2\), the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.</description><subject>Electrical junctions</subject><subject>Magnetic switching</subject><subject>Magnetization</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Tunnel junctions</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotj89LwzAYhoMgOObuniTgufXLl35tepRRf8DAy-4lS5PZ0qU1aUX_ezvn6b08vDwPY3cC0kwRwaMO3-1XCgqyVBJmV2yFUopEZYg3bBNjBwCYF0gkV6yqnLNminxw3MwhWD_xwXOv_RCN7i0PrT8m8UOPtuEnffR2ag2fZu9tz7vZm6kdfLxl10730W7-d832z9V--5rs3l_etk-7RJPAhAjJlBI1YWOaxoI55ELIzEmVC3KFA9doYZ2m3B0IQIBEs-CNKEyulJRrdn-5_Uusx9CedPipz6n1OXUBHi7AGIbP2cap7oY5-EWpRlClkrkoUf4Cis1WXQ</recordid><startdate>20080422</startdate><enddate>20080422</enddate><creator>Hong-Xiang, Wei</creator><creator>He, Jiexuan</creator><creator>Zhen-Chao, Wen</creator><creator>Xiu-Feng, Han</creator><creator>Wen-Shan Zhan</creator><creator>Zhang, Shufeng</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20080422</creationdate><title>Effects of current on nanoscale ring-shaped magnetic tunnel junctions</title><author>Hong-Xiang, Wei ; He, Jiexuan ; Zhen-Chao, Wen ; Xiu-Feng, Han ; Wen-Shan Zhan ; Zhang, Shufeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a512-5525c932a52dcdde0cb61134f38615f7f0fda1efa56fb5001032c32ad17c68833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electrical junctions</topic><topic>Magnetic switching</topic><topic>Magnetization</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Tunnel junctions</topic><toplevel>online_resources</toplevel><creatorcontrib>Hong-Xiang, Wei</creatorcontrib><creatorcontrib>He, Jiexuan</creatorcontrib><creatorcontrib>Zhen-Chao, Wen</creatorcontrib><creatorcontrib>Xiu-Feng, Han</creatorcontrib><creatorcontrib>Wen-Shan Zhan</creatorcontrib><creatorcontrib>Zhang, Shufeng</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hong-Xiang, Wei</au><au>He, Jiexuan</au><au>Zhen-Chao, Wen</au><au>Xiu-Feng, Han</au><au>Wen-Shan Zhan</au><au>Zhang, Shufeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of current on nanoscale ring-shaped magnetic tunnel junctions</atitle><jtitle>arXiv.org</jtitle><date>2008-04-22</date><risdate>2008</risdate><eissn>2331-8422</eissn><abstract>We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of \(6\times 10^{6}\)A/cm\(^2\), the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0804.3524</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | EISSN: 2331-8422 |
ispartof | arXiv.org, 2008-04 |
issn | 2331-8422 |
language | eng |
recordid | cdi_arxiv_primary_0804_3524 |
source | arXiv.org; Free E- Journals |
subjects | Electrical junctions Magnetic switching Magnetization Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Tunnel junctions |
title | Effects of current on nanoscale ring-shaped magnetic tunnel junctions |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T00%3A25%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20current%20on%20nanoscale%20ring-shaped%20magnetic%20tunnel%20junctions&rft.jtitle=arXiv.org&rft.au=Hong-Xiang,%20Wei&rft.date=2008-04-22&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.0804.3524&rft_dat=%3Cproquest_arxiv%3E2089836192%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2089836192&rft_id=info:pmid/&rfr_iscdi=true |