Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacit...

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Bibliographische Detailangaben

Hauptverfasser:	Sun, Jie, Li, Ruoyuan, Zhao, Chang, Yu, Like, Ye, Xiaoling, Xu, Bo, Chen, Yonghai, Wang, Zhanguo
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Mesoscale and Nanoscale Physics
Online-Zugang:	Volltext bestellen
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