High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE

High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE

InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contin...

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Veröffentlicht in:ACS applied materials & interfaces 2022-07, Vol.14 (29), p.34029-34039
Hauptverfasser: Kundu, Shreya, Decoster, Stefan, Bezard, Philippe, Nalin Mehta, Ankit, Dekkers, Harold, Lazzarino, Frederic
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Surfaces, Interfaces, and Applications
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container_end_page 34039
container_issue 29
container_start_page 34029
container_title ACS applied materials & interfaces
container_volume 14
creator Kundu, Shreya
Decoster, Stefan
Bezard, Philippe
Nalin Mehta, Ankit
Dekkers, Harold
Lazzarino, Frederic
description InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH4-based plasma. Although the etched by-products are volatile, there remains a concern that passivationan associated effect arising from the use of a hydrocarbon etchantmay inhibit the patterning process. However, there has been limited discussion on the CH4-based etching of IGZO and the subsequent patterning challenges arising with pitch scaling (
doi_str_mv 10.1021/acsami.2c07514
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However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH4-based plasma. Although the etched by-products are volatile, there remains a concern that passivationan associated effect arising from the use of a hydrocarbon etchantmay inhibit the patterning process. However, there has been limited discussion on the CH4-based etching of IGZO and the subsequent patterning challenges arising with pitch scaling (&lt;200 nm). In this work, we systematically investigate dry chemical etching schemes to pattern an IGZO film into densely packed nanostructures using CH4. Straight IGZO lines, ∼45 nm in width at a pitch of ∼135 nm, are produced by employing the traditional reactive ion etching method. While the passivating effect of CH4 does not impede the etching process, any further shrinkage of feature and pitch dimensions amplifies reactive ion etching-induced damage in the form of profile distortion and residue redeposition. We show that this is efficiently addressed via atomic layer etching (ALE) of IGZO with CH4 using a pulsed plasma. The unique combination of ALE and plasma pulsing enables controlled reduction of ion-assisted sputtering and redeposition of residues on the patterned IGZO features. This approach is highly scalable and is successfully applied here to achieve well-separated IGZO lines, with critical dimensions down to ∼20 nm at a dense pitch of ∼36 nm. These lines exhibit steep profiles (∼80°) and no undesirable change in IGZO composition post-patterning. 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Mater. Interfaces</addtitle><date>2022-07-27</date><risdate>2022</risdate><volume>14</volume><issue>29</issue><spage>34029</spage><epage>34039</epage><pages>34029-34039</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH4-based plasma. Although the etched by-products are volatile, there remains a concern that passivationan associated effect arising from the use of a hydrocarbon etchantmay inhibit the patterning process. However, there has been limited discussion on the CH4-based etching of IGZO and the subsequent patterning challenges arising with pitch scaling (&lt;200 nm). In this work, we systematically investigate dry chemical etching schemes to pattern an IGZO film into densely packed nanostructures using CH4. Straight IGZO lines, ∼45 nm in width at a pitch of ∼135 nm, are produced by employing the traditional reactive ion etching method. While the passivating effect of CH4 does not impede the etching process, any further shrinkage of feature and pitch dimensions amplifies reactive ion etching-induced damage in the form of profile distortion and residue redeposition. We show that this is efficiently addressed via atomic layer etching (ALE) of IGZO with CH4 using a pulsed plasma. The unique combination of ALE and plasma pulsing enables controlled reduction of ion-assisted sputtering and redeposition of residues on the patterned IGZO features. This approach is highly scalable and is successfully applied here to achieve well-separated IGZO lines, with critical dimensions down to ∼20 nm at a dense pitch of ∼36 nm. These lines exhibit steep profiles (∼80°) and no undesirable change in IGZO composition post-patterning. Finally, ALE of IGZO under pulsed plasma, reproduced on 300 mm wafers, highlights its suitability in large-scale manufacturing for the intended applications.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.2c07514</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-2169-940X</orcidid><orcidid>https://orcid.org/0000-0001-8052-7774</orcidid></addata></record>
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title High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE
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