Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment
We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal–insulator–semiconductor-high-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH...
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| Veröffentlicht in: | ACS applied electronic materials 2024-01, Vol.6 (1), p.150-154 |
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| container_title | ACS applied electronic materials |
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| creator | Li, Yu Zhou, Jiaan Xing, Runxian Lu, Shaoqian Yang, An Guo, Bohan Liu, Bosen Du, Zhongkai Yu, Guohao Zeng, Zhongming Cai, Yong Zhang, Baoshun |
| description | We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal–insulator–semiconductor-high-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al2O3/AlGaN interfaces. When the temperature was increased to 473 K, the maximum field effective mobility (μFE) was improved from 450 to 483 cm2/V·s, and on-resistance was improved by ∼6.8%. |
| doi_str_mv | 10.1021/acsaelm.3c01427 |
| format | Article |
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When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al2O3/AlGaN interfaces. 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Electron. Mater</addtitle><description>We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal–insulator–semiconductor-high-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al2O3/AlGaN interfaces. When the temperature was increased to 473 K, the maximum field effective mobility (μFE) was improved from 450 to 483 cm2/V·s, and on-resistance was improved by ∼6.8%.</description><issn>2637-6113</issn><issn>2637-6113</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpNkLFOwzAQhiMEElXpzOodpeTsNGnGqpS2UqsOLWKMnPhCXcV2FTtANt6Bh-F9eBKMyMB0_0n3_Sd9QXAL0RgiCve8tBxrNWZlBDFNL4IBTVgaJgDs8l--DkbWnqLIIzSmExgEX2t1bswrCrLkDsne8ULW0nXEVGSLjtffH59rbduaO9P4vEclS6NFW_o9XMmXY7iosXSN0eHW9Oyh4dpK6y8seZPuSCAiWpGZMx4mG95hQx7wbKx00mgyq-mOkcJz6Bqu0B27mitltGwVWXWiMe9SIHlG55uRO4Xa3QRXFa8tjvo5DJ4eF4f5Ktzsluv5bBNyyMCFGUUeszhORSYwoVXKIBPRtIISKaTVNM1YPK0SjiKuAAqaYFolRSliSAGQTdgwuPvr9Ybzk2kb7b_lEOW_2vNee95rZz9NgH1w</recordid><startdate>20240123</startdate><enddate>20240123</enddate><creator>Li, Yu</creator><creator>Zhou, Jiaan</creator><creator>Xing, Runxian</creator><creator>Lu, Shaoqian</creator><creator>Yang, An</creator><creator>Guo, Bohan</creator><creator>Liu, Bosen</creator><creator>Du, Zhongkai</creator><creator>Yu, Guohao</creator><creator>Zeng, Zhongming</creator><creator>Cai, Yong</creator><creator>Zhang, Baoshun</creator><general>American Chemical Society</general><scope/><orcidid>https://orcid.org/0000-0003-1527-033X</orcidid><orcidid>https://orcid.org/0000-0002-4136-8376</orcidid><orcidid>https://orcid.org/0009-0000-8217-3201</orcidid><orcidid>https://orcid.org/0000-0001-7240-2058</orcidid></search><sort><creationdate>20240123</creationdate><title>Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment</title><author>Li, Yu ; Zhou, Jiaan ; Xing, Runxian ; Lu, Shaoqian ; Yang, An ; Guo, Bohan ; Liu, Bosen ; Du, Zhongkai ; Yu, Guohao ; Zeng, Zhongming ; Cai, Yong ; Zhang, Baoshun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a191t-92ea43447d9de62f7319d08f1ce217f879348f6aed4f11b26e7f6bcd41711e353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yu</creatorcontrib><creatorcontrib>Zhou, Jiaan</creatorcontrib><creatorcontrib>Xing, Runxian</creatorcontrib><creatorcontrib>Lu, Shaoqian</creatorcontrib><creatorcontrib>Yang, An</creatorcontrib><creatorcontrib>Guo, Bohan</creatorcontrib><creatorcontrib>Liu, Bosen</creatorcontrib><creatorcontrib>Du, Zhongkai</creatorcontrib><creatorcontrib>Yu, Guohao</creatorcontrib><creatorcontrib>Zeng, Zhongming</creatorcontrib><creatorcontrib>Cai, Yong</creatorcontrib><creatorcontrib>Zhang, Baoshun</creatorcontrib><jtitle>ACS applied electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yu</au><au>Zhou, Jiaan</au><au>Xing, Runxian</au><au>Lu, Shaoqian</au><au>Yang, An</au><au>Guo, Bohan</au><au>Liu, Bosen</au><au>Du, Zhongkai</au><au>Yu, Guohao</au><au>Zeng, Zhongming</au><au>Cai, Yong</au><au>Zhang, Baoshun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment</atitle><jtitle>ACS applied electronic materials</jtitle><addtitle>ACS Appl. Electron. Mater</addtitle><date>2024-01-23</date><risdate>2024</risdate><volume>6</volume><issue>1</issue><spage>150</spage><epage>154</epage><pages>150-154</pages><issn>2637-6113</issn><eissn>2637-6113</eissn><abstract>We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal–insulator–semiconductor-high-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al2O3/AlGaN interfaces. When the temperature was increased to 473 K, the maximum field effective mobility (μFE) was improved from 450 to 483 cm2/V·s, and on-resistance was improved by ∼6.8%.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsaelm.3c01427</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-1527-033X</orcidid><orcidid>https://orcid.org/0000-0002-4136-8376</orcidid><orcidid>https://orcid.org/0009-0000-8217-3201</orcidid><orcidid>https://orcid.org/0000-0001-7240-2058</orcidid></addata></record> |
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| source | American Chemical Society Journals |
| title | Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment |
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