Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

In this work, a deep-UV photodetector based on a Sn-doped Ga2O3 (Sn:Ga2O3) thin film grown by mist chemical vapor deposition (mist-CVD) technology on an α-Al2O3 substrate is introduced. This feasible and cheap mist-CVD method contributed to the preparation of a Sn:Ga2O3 thin film. It was found that...

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Veröffentlicht in:	ACS applied electronic materials 2023-12, Vol.5 (12), p.7061-7069
Hauptverfasser:	Yao, Suhao, Liu, Zeng, Zhang, Maolin, Shu, Lincong, Xi, Zhaoying, Li, Lei, Yan, Sihan, Guo, Yufeng, Tang, Weihua
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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