Selective Crystallization of Ferroelectric Hf x Zr1–x O2 via Excimer Laser Annealing

Selective Crystallization of Ferroelectric Hf x Zr1–x O2 via Excimer Laser Annealing

Herein, we report the ferroelectricity of Hf x Zr1–x O2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–v...

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Veröffentlicht in:ACS applied electronic materials 2023-01, Vol.5 (1), p.117-122
Hauptverfasser: Song, Myeong Seop, Park, Kunwoo, Lee, Kyoungjun, Cho, Jung Woo, Lee, Tae Yoon, Park, Jungwon, Chae, Seung Chul
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container_issue 1
container_start_page 117
container_title ACS applied electronic materials
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creator Song, Myeong Seop
Park, Kunwoo
Lee, Kyoungjun
Cho, Jung Woo
Lee, Tae Yoon
Park, Jungwon
Chae, Seung Chul
description Herein, we report the ferroelectricity of Hf x Zr1–x O2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–voltage hysteresis. The laser-annealed Hf0.5Zr0.5O2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films.
doi_str_mv 10.1021/acsaelm.2c01555
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