Avalanche Gain in Metal–Semiconductor–Metal Ga2O3 Solar-Blind Photodiodes

Metal–semiconductor–metal structured photodetectors based on β-Ga2O3 thin films were fabricated. Because of the high dark-resistance and considerable photoconduction, extremely uneven distribution of electric field is formed in the device under solar-blind UV light-illumination when a bias is added....

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Veröffentlicht in:	Journal of physical chemistry. C 2019-08, Vol.123 (30), p.18516-18520
Hauptverfasser:	Qiao, Baoshi, Zhang, Zhenzhong, Xie, Xiuhua, Li, Binghui, Li, Kexue, Chen, Xing, Zhao, Haifeng, Liu, Kewei, Liu, Lei, Shen, Dezhen
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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