Surface Modification on Solution Processable ZrO2 High‑k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

High quality zirconium oxide (ZrO2) high-k dielectrics have been fabricated by chemical solution processes. The ZrO2 thin films annealed at various temperatures were studied from microstructure properties to electric properties in detail. The dielectric film annealed at 700 °C features a smooth surf...

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Veröffentlicht in:	Journal of physical chemistry. C 2016-05, Vol.120 (18), p.9949-9957
Hauptverfasser:	He, Wenqiang, Xu, Wenchao, Peng, Qiang, Liu, Chuan, Zhou, Guofu, Wu, Sujuan, Zeng, Min, Zhang, Zhang, Gao, Jinwei, Gao, Xingsen, Lu, Xubing, Liu, J.-M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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