Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction
The tribovoltaic devices have demonstrated an enormous current density output from friction. This has attracted attention, and thus, the tribovoltaic device research is expected to grow rapidly, providing mechanical energy harvesting from human motion or mechanical vibrations to power the microdevic...
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| Veröffentlicht in: | Journal of physical chemistry. C 2021-07, Vol.125 (26), p.14212-14220 |
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| container_title | Journal of physical chemistry. C |
| container_volume | 125 |
| creator | Šutka, Andris Zubkins, Martins Linarts, Artis Lapčinskis, Linards Ma̅lnieks, Kaspars Verners, Osvalds Sarakovskis, Anatolijs Grzibovskis, Raitis Gabrusenoks, Jevgenijs Strods, Edvards Smits, Krisjanis Vibornijs, Viktors Bikse, Liga Purans, Juris |
| description | The tribovoltaic devices have demonstrated an enormous current density output from friction. This has attracted attention, and thus, the tribovoltaic device research is expected to grow rapidly, providing mechanical energy harvesting from human motion or mechanical vibrations to power the microdevices. Herein, we are demonstrating the novel tribovoltaic device based on the W/WO3 Schottky junction enabled by high-energy electrons as in hot-carrier photovoltaic devices. The hot carrier injection from the metal to the semiconductor has been well demonstrated before in light-driven devices but not demonstrated for tribovoltaic devices. Friction-caused electronic excitations on the W needle provide energy for electrons to overcome the Schottky barrier and generate the unbiased current density up to 1270 A m–2. The amorphous WO3 derived from magnetron sputtering shows high durability and reliability of the tribovoltaic device. |
| doi_str_mv | 10.1021/acs.jpcc.1c04312 |
| format | Article |
| fullrecord | <record><control><sourceid>acs</sourceid><recordid>TN_cdi_acs_journals_10_1021_acs_jpcc_1c04312</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>b882995977</sourcerecordid><originalsourceid>FETCH-LOGICAL-a122t-296083509b4e3883d2d72a58007314d589b7a8d5667eda4d54091c86c074b56b3</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEqVw5-gHIO36L3aOEAoFVcqBoh4jxzFNQhVXjlPB22NKxWlWM6Md6UPolsCMACVzbYZZtzdmRgxwRugZmpCM0URyIc7_by4v0dUwdACCAWETpNe-rdzB7YJuDX60h9ZY_KAHW2PX49BYvJlvCobfTONC-PzGr2NvQhuzYm-9Dm2_jS3vxm2Dly7gXHvfWo8XX8HrY_EaXXzo3WBvTjpF70-Ldb5MVsXzS36_SjShNCQ0S0ExAVnFLVOK1bSWVAsFIBnhtVBZJbWqRZpKW-tocMiIUakBySuRVmyK7v7-RhJl50bfx7WSQPmLpzyaEU95wsN-ANHpWZA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction</title><source>American Chemical Society Journals</source><creator>Šutka, Andris ; Zubkins, Martins ; Linarts, Artis ; Lapčinskis, Linards ; Ma̅lnieks, Kaspars ; Verners, Osvalds ; Sarakovskis, Anatolijs ; Grzibovskis, Raitis ; Gabrusenoks, Jevgenijs ; Strods, Edvards ; Smits, Krisjanis ; Vibornijs, Viktors ; Bikse, Liga ; Purans, Juris</creator><creatorcontrib>Šutka, Andris ; Zubkins, Martins ; Linarts, Artis ; Lapčinskis, Linards ; Ma̅lnieks, Kaspars ; Verners, Osvalds ; Sarakovskis, Anatolijs ; Grzibovskis, Raitis ; Gabrusenoks, Jevgenijs ; Strods, Edvards ; Smits, Krisjanis ; Vibornijs, Viktors ; Bikse, Liga ; Purans, Juris</creatorcontrib><description>The tribovoltaic devices have demonstrated an enormous current density output from friction. This has attracted attention, and thus, the tribovoltaic device research is expected to grow rapidly, providing mechanical energy harvesting from human motion or mechanical vibrations to power the microdevices. Herein, we are demonstrating the novel tribovoltaic device based on the W/WO3 Schottky junction enabled by high-energy electrons as in hot-carrier photovoltaic devices. The hot carrier injection from the metal to the semiconductor has been well demonstrated before in light-driven devices but not demonstrated for tribovoltaic devices. Friction-caused electronic excitations on the W needle provide energy for electrons to overcome the Schottky barrier and generate the unbiased current density up to 1270 A m–2. The amorphous WO3 derived from magnetron sputtering shows high durability and reliability of the tribovoltaic device.</description><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/acs.jpcc.1c04312</identifier><language>eng</language><publisher>American Chemical Society</publisher><subject>C: Energy Conversion and Storage</subject><ispartof>Journal of physical chemistry. C, 2021-07, Vol.125 (26), p.14212-14220</ispartof><rights>2021 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5048-2429 ; 0000-0002-5739-0164</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c04312$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.jpcc.1c04312$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids></links><search><creatorcontrib>Šutka, Andris</creatorcontrib><creatorcontrib>Zubkins, Martins</creatorcontrib><creatorcontrib>Linarts, Artis</creatorcontrib><creatorcontrib>Lapčinskis, Linards</creatorcontrib><creatorcontrib>Ma̅lnieks, Kaspars</creatorcontrib><creatorcontrib>Verners, Osvalds</creatorcontrib><creatorcontrib>Sarakovskis, Anatolijs</creatorcontrib><creatorcontrib>Grzibovskis, Raitis</creatorcontrib><creatorcontrib>Gabrusenoks, Jevgenijs</creatorcontrib><creatorcontrib>Strods, Edvards</creatorcontrib><creatorcontrib>Smits, Krisjanis</creatorcontrib><creatorcontrib>Vibornijs, Viktors</creatorcontrib><creatorcontrib>Bikse, Liga</creatorcontrib><creatorcontrib>Purans, Juris</creatorcontrib><title>Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction</title><title>Journal of physical chemistry. C</title><addtitle>J. Phys. Chem. C</addtitle><description>The tribovoltaic devices have demonstrated an enormous current density output from friction. This has attracted attention, and thus, the tribovoltaic device research is expected to grow rapidly, providing mechanical energy harvesting from human motion or mechanical vibrations to power the microdevices. Herein, we are demonstrating the novel tribovoltaic device based on the W/WO3 Schottky junction enabled by high-energy electrons as in hot-carrier photovoltaic devices. The hot carrier injection from the metal to the semiconductor has been well demonstrated before in light-driven devices but not demonstrated for tribovoltaic devices. Friction-caused electronic excitations on the W needle provide energy for electrons to overcome the Schottky barrier and generate the unbiased current density up to 1270 A m–2. The amorphous WO3 derived from magnetron sputtering shows high durability and reliability of the tribovoltaic device.</description><subject>C: Energy Conversion and Storage</subject><issn>1932-7447</issn><issn>1932-7455</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNo9kM1OwzAQhC0EEqVw5-gHIO36L3aOEAoFVcqBoh4jxzFNQhVXjlPB22NKxWlWM6Md6UPolsCMACVzbYZZtzdmRgxwRugZmpCM0URyIc7_by4v0dUwdACCAWETpNe-rdzB7YJuDX60h9ZY_KAHW2PX49BYvJlvCobfTONC-PzGr2NvQhuzYm-9Dm2_jS3vxm2Dly7gXHvfWo8XX8HrY_EaXXzo3WBvTjpF70-Ldb5MVsXzS36_SjShNCQ0S0ExAVnFLVOK1bSWVAsFIBnhtVBZJbWqRZpKW-tocMiIUakBySuRVmyK7v7-RhJl50bfx7WSQPmLpzyaEU95wsN-ANHpWZA</recordid><startdate>20210708</startdate><enddate>20210708</enddate><creator>Šutka, Andris</creator><creator>Zubkins, Martins</creator><creator>Linarts, Artis</creator><creator>Lapčinskis, Linards</creator><creator>Ma̅lnieks, Kaspars</creator><creator>Verners, Osvalds</creator><creator>Sarakovskis, Anatolijs</creator><creator>Grzibovskis, Raitis</creator><creator>Gabrusenoks, Jevgenijs</creator><creator>Strods, Edvards</creator><creator>Smits, Krisjanis</creator><creator>Vibornijs, Viktors</creator><creator>Bikse, Liga</creator><creator>Purans, Juris</creator><general>American Chemical Society</general><scope/><orcidid>https://orcid.org/0000-0002-5048-2429</orcidid><orcidid>https://orcid.org/0000-0002-5739-0164</orcidid></search><sort><creationdate>20210708</creationdate><title>Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction</title><author>Šutka, Andris ; Zubkins, Martins ; Linarts, Artis ; Lapčinskis, Linards ; Ma̅lnieks, Kaspars ; Verners, Osvalds ; Sarakovskis, Anatolijs ; Grzibovskis, Raitis ; Gabrusenoks, Jevgenijs ; Strods, Edvards ; Smits, Krisjanis ; Vibornijs, Viktors ; Bikse, Liga ; Purans, Juris</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a122t-296083509b4e3883d2d72a58007314d589b7a8d5667eda4d54091c86c074b56b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>C: Energy Conversion and Storage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Šutka, Andris</creatorcontrib><creatorcontrib>Zubkins, Martins</creatorcontrib><creatorcontrib>Linarts, Artis</creatorcontrib><creatorcontrib>Lapčinskis, Linards</creatorcontrib><creatorcontrib>Ma̅lnieks, Kaspars</creatorcontrib><creatorcontrib>Verners, Osvalds</creatorcontrib><creatorcontrib>Sarakovskis, Anatolijs</creatorcontrib><creatorcontrib>Grzibovskis, Raitis</creatorcontrib><creatorcontrib>Gabrusenoks, Jevgenijs</creatorcontrib><creatorcontrib>Strods, Edvards</creatorcontrib><creatorcontrib>Smits, Krisjanis</creatorcontrib><creatorcontrib>Vibornijs, Viktors</creatorcontrib><creatorcontrib>Bikse, Liga</creatorcontrib><creatorcontrib>Purans, Juris</creatorcontrib><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Šutka, Andris</au><au>Zubkins, Martins</au><au>Linarts, Artis</au><au>Lapčinskis, Linards</au><au>Ma̅lnieks, Kaspars</au><au>Verners, Osvalds</au><au>Sarakovskis, Anatolijs</au><au>Grzibovskis, Raitis</au><au>Gabrusenoks, Jevgenijs</au><au>Strods, Edvards</au><au>Smits, Krisjanis</au><au>Vibornijs, Viktors</au><au>Bikse, Liga</au><au>Purans, Juris</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction</atitle><jtitle>Journal of physical chemistry. C</jtitle><addtitle>J. Phys. Chem. C</addtitle><date>2021-07-08</date><risdate>2021</risdate><volume>125</volume><issue>26</issue><spage>14212</spage><epage>14220</epage><pages>14212-14220</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><abstract>The tribovoltaic devices have demonstrated an enormous current density output from friction. This has attracted attention, and thus, the tribovoltaic device research is expected to grow rapidly, providing mechanical energy harvesting from human motion or mechanical vibrations to power the microdevices. Herein, we are demonstrating the novel tribovoltaic device based on the W/WO3 Schottky junction enabled by high-energy electrons as in hot-carrier photovoltaic devices. The hot carrier injection from the metal to the semiconductor has been well demonstrated before in light-driven devices but not demonstrated for tribovoltaic devices. Friction-caused electronic excitations on the W needle provide energy for electrons to overcome the Schottky barrier and generate the unbiased current density up to 1270 A m–2. The amorphous WO3 derived from magnetron sputtering shows high durability and reliability of the tribovoltaic device.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.jpcc.1c04312</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-5048-2429</orcidid><orcidid>https://orcid.org/0000-0002-5739-0164</orcidid></addata></record> |
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| ispartof | Journal of physical chemistry. C, 2021-07, Vol.125 (26), p.14212-14220 |
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| language | eng |
| recordid | cdi_acs_journals_10_1021_acs_jpcc_1c04312 |
| source | American Chemical Society Journals |
| subjects | C: Energy Conversion and Storage |
| title | Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T18%3A44%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tribovoltaic%20Device%20Based%20on%20the%20W/WO3%20Schottky%20Junction%20Operating%20through%20Hot%20Carrier%20Extraction&rft.jtitle=Journal%20of%20physical%20chemistry.%20C&rft.au=S%CC%8Cutka,%20Andris&rft.date=2021-07-08&rft.volume=125&rft.issue=26&rft.spage=14212&rft.epage=14220&rft.pages=14212-14220&rft.issn=1932-7447&rft.eissn=1932-7455&rft_id=info:doi/10.1021/acs.jpcc.1c04312&rft_dat=%3Cacs%3Eb882995977%3C/acs%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |