Fundamental Semiconducting Properties of Perovskite Oxynitride SrNbO2N: Epitaxial Growth and Characterization

We carried out theoretical calculations and demonstrated epitaxial growth of SrNbO2N by RF reactive sputtering. The SrNbO2N (001) epitaxial film on a SrTiO3 (001) substrate had a single orientation and was of high crystalline quality. The film’s band gap was experimentally determined as being 1.81 e...

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Veröffentlicht in:	Chemistry of materials 2017-09, Vol.29 (18), p.7697-7703
Hauptverfasser:	Kikuchi, Ryosuke, Nakamura, Toru, Tamura, Satoru, Kaneko, Yasushi, Hato, Kazuhito
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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