HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer

Area-selective atomic layer deposition (AS-ALD) is a bottom-up materials synthesis process that provides the opportunity to overcome challenges associated with current top-down fabrication methods. In this study, we develop a surface treatment process by using an aminosilane molecule (di­(isopropyla...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Chemistry of materials 2024-05, Vol.36 (9), p.4303-4314
Hauptverfasser:	Lee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!