Understanding 2D Semiconductor Edges by Combining Local and Nonlocal Effects: The Case of MoSi2N4

Similar to surfaces of three-dimensional (3D) bulk materials, edges are inevitable in 2D materials and have been studied a lot (e.g., for MoS2). In the current work, taking the ambient-stable MoSi2N4 as an example, nonpolar and polar edges as well as polar-edge reconstructions are studied based on f...

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Veröffentlicht in:	Chemistry of materials 2024-02, Vol.36 (3), p.1526-1535
Hauptverfasser:	Zhang, Yuejiao, Gao, Yumeng, Ren, Yinti, Jin, Chendong, Zhang, Hu, Lian, Ruqian, Gong, Penglai, Wang, Rui-Ning, Wang, Jiang-Long, Shi, Xing-Qiang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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