Influence of Oxygen Partial Pressure during Growth on Optical and Electrical Properties of Ca3TaAl3Si2O14 Single Crystals
Among the langasite family, Ca3TaAl3Si2O14 (CTAS) is particularly promising for high temperature sensor applications due to its relatively high resistivity. In this work, CTAS single crystals have been grown by the Czochralski technique under various oxygen partial pressures using Ir and Pt crucible...
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| Veröffentlicht in: | Crystal growth & design 2016-04, Vol.16 (4), p.2151-2156 |
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| container_title | Crystal growth & design |
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| creator | Fu, Xiuwei Víllora, Encarnación G Matsushita, Yoshitaka Kitanaka, Yuuki Noguchi, Yuji Miyayama, Masaru Shimamura, Kiyoshi Ohashi, Naoki |
| description | Among the langasite family, Ca3TaAl3Si2O14 (CTAS) is particularly promising for high temperature sensor applications due to its relatively high resistivity. In this work, CTAS single crystals have been grown by the Czochralski technique under various oxygen partial pressures using Ir and Pt crucibles. Colorless CTAS crystals were grown for the first time; however, the elimination of related defects did not influence the electrical properties. Furthermore, dielectric and piezoelectric properties were independent of growth conditions. Instead, the electrical resistivity was found to be remarkably higher the lower the oxygen partial pressure, reaching a value of ∼7 × 1010 Ω cm at 400 °C, which is 3 orders of magnitude higher than that of disordered LTGA. Therefore, grown CTAS crystals are promising for high temperature piezoelectric sensor applications. |
| doi_str_mv | 10.1021/acs.cgd.5b01822 |
| format | Article |
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In this work, CTAS single crystals have been grown by the Czochralski technique under various oxygen partial pressures using Ir and Pt crucibles. Colorless CTAS crystals were grown for the first time; however, the elimination of related defects did not influence the electrical properties. Furthermore, dielectric and piezoelectric properties were independent of growth conditions. Instead, the electrical resistivity was found to be remarkably higher the lower the oxygen partial pressure, reaching a value of ∼7 × 1010 Ω cm at 400 °C, which is 3 orders of magnitude higher than that of disordered LTGA. Therefore, grown CTAS crystals are promising for high temperature piezoelectric sensor applications.</description><identifier>ISSN: 1528-7483</identifier><identifier>EISSN: 1528-7505</identifier><identifier>DOI: 10.1021/acs.cgd.5b01822</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>Crystal growth & design, 2016-04, Vol.16 (4), p.2151-2156</ispartof><rights>Copyright © 2016 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01822$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.cgd.5b01822$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27053,27901,27902,56713,56763</link.rule.ids></links><search><creatorcontrib>Fu, Xiuwei</creatorcontrib><creatorcontrib>Víllora, Encarnación G</creatorcontrib><creatorcontrib>Matsushita, Yoshitaka</creatorcontrib><creatorcontrib>Kitanaka, Yuuki</creatorcontrib><creatorcontrib>Noguchi, Yuji</creatorcontrib><creatorcontrib>Miyayama, Masaru</creatorcontrib><creatorcontrib>Shimamura, Kiyoshi</creatorcontrib><creatorcontrib>Ohashi, Naoki</creatorcontrib><title>Influence of Oxygen Partial Pressure during Growth on Optical and Electrical Properties of Ca3TaAl3Si2O14 Single Crystals</title><title>Crystal growth & design</title><addtitle>Cryst. 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Growth Des</addtitle><date>2016-04-06</date><risdate>2016</risdate><volume>16</volume><issue>4</issue><spage>2151</spage><epage>2156</epage><pages>2151-2156</pages><issn>1528-7483</issn><eissn>1528-7505</eissn><abstract>Among the langasite family, Ca3TaAl3Si2O14 (CTAS) is particularly promising for high temperature sensor applications due to its relatively high resistivity. In this work, CTAS single crystals have been grown by the Czochralski technique under various oxygen partial pressures using Ir and Pt crucibles. Colorless CTAS crystals were grown for the first time; however, the elimination of related defects did not influence the electrical properties. Furthermore, dielectric and piezoelectric properties were independent of growth conditions. Instead, the electrical resistivity was found to be remarkably higher the lower the oxygen partial pressure, reaching a value of ∼7 × 1010 Ω cm at 400 °C, which is 3 orders of magnitude higher than that of disordered LTGA. 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| title | Influence of Oxygen Partial Pressure during Growth on Optical and Electrical Properties of Ca3TaAl3Si2O14 Single Crystals |
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