Ambipolar double-gate FET binary-decision- diagram (Am-BDD) for reconfigurable logic cells
A novel Ambipolar Binary Decision Diagram (Am-BDD) is proposed in this paper, to adapt this logic synthesis and verification technique to logic built with ambipolar devices. We demonstrate how this method enables us to build DG-CNTFET-based n-input reconfigurable cells based on pass-transistor-logic...
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creator | Jabeur, K. Yakymets, N. O'Connor, I. Le Beux, S. |
description | A novel Ambipolar Binary Decision Diagram (Am-BDD) is proposed in this paper, to adapt this logic synthesis and verification technique to logic built with ambipolar devices. We demonstrate how this method enables us to build DG-CNTFET-based n-input reconfigurable cells based on pass-transistor-logic obtained from Am-BDDs. We also show how specific correlations between configuration signals can lead to a minimization of their total number. Using the Am-BDD technique, we designed a reconfigurable 2-input cell capable of achieving 16 functions and demonstrating a significant reduction in power consumption (6x) with a reduced worst-case time delay when compared to a manually designed reconfigurable 2-input dynamic logic cell DRLC-7T. |
doi_str_mv | 10.1109/NANOARCH.2011.5941499 |
format | Conference Proceeding |
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We demonstrate how this method enables us to build DG-CNTFET-based n-input reconfigurable cells based on pass-transistor-logic obtained from Am-BDDs. We also show how specific correlations between configuration signals can lead to a minimization of their total number. Using the Am-BDD technique, we designed a reconfigurable 2-input cell capable of achieving 16 functions and demonstrating a significant reduction in power consumption (6x) with a reduced worst-case time delay when compared to a manually designed reconfigurable 2-input dynamic logic cell DRLC-7T.</description><identifier>ISSN: 2327-8218</identifier><identifier>ISBN: 1457709937</identifier><identifier>ISBN: 9781457709937</identifier><identifier>EISSN: 2327-8226</identifier><identifier>EISBN: 9781457709944</identifier><identifier>EISBN: 1457709945</identifier><identifier>EISBN: 9781457709951</identifier><identifier>EISBN: 1457709953</identifier><identifier>DOI: 10.1109/NANOARCH.2011.5941499</identifier><language>eng</language><publisher>Washington, DC, USA: IEEE Computer Society</publisher><subject>ambipolar double-gate devices ; Applied computing -- Physical sciences and engineering -- Electronics ; Artificial intelligence ; Barium ; BDD ; Boolean functions ; CNTFETs ; Correlation ; Data structures ; emerging technologies ; Hardware -- Integrated circuits -- Logic circuits ; Hardware -- Robustness ; Manuals ; MOS devices ; Reconfigurable cells</subject><ispartof>2011 IEEE/ACM International Symposium on Nanoscale Architectures, 2011, p.162-168</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5941499$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5941499$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jabeur, K.</creatorcontrib><creatorcontrib>Yakymets, N.</creatorcontrib><creatorcontrib>O'Connor, I.</creatorcontrib><creatorcontrib>Le Beux, S.</creatorcontrib><title>Ambipolar double-gate FET binary-decision- diagram (Am-BDD) for reconfigurable logic cells</title><title>2011 IEEE/ACM International Symposium on Nanoscale Architectures</title><addtitle>NANOARCH</addtitle><description>A novel Ambipolar Binary Decision Diagram (Am-BDD) is proposed in this paper, to adapt this logic synthesis and verification technique to logic built with ambipolar devices. We demonstrate how this method enables us to build DG-CNTFET-based n-input reconfigurable cells based on pass-transistor-logic obtained from Am-BDDs. We also show how specific correlations between configuration signals can lead to a minimization of their total number. 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ispartof | 2011 IEEE/ACM International Symposium on Nanoscale Architectures, 2011, p.162-168 |
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subjects | ambipolar double-gate devices Applied computing -- Physical sciences and engineering -- Electronics Artificial intelligence Barium BDD Boolean functions CNTFETs Correlation Data structures emerging technologies Hardware -- Integrated circuits -- Logic circuits Hardware -- Robustness Manuals MOS devices Reconfigurable cells |
title | Ambipolar double-gate FET binary-decision- diagram (Am-BDD) for reconfigurable logic cells |
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