N-O related shallow donors in silicon: Stoichiometry investigations von Wagner, H. E., Alt, H. Ch, von Ammon, W., Bittersberger, F., Huber, A., Koester, L.

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Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth von Lukanin, D.P., Kalaev, V.V., Makarov, Yu.N., Wetzel, T., Virbulis, J., von Ammon, W.

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The impact of nitrogen on the defect aggregation in silicon von von Ammon, W., Hölzl, R., Virbulis, J., Dornberger, E., Schmolke, R., Gräf, D.

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Investigation of Ostwald ripening in nitrogen doped Czochralski silicon von Kissinger, G., Huber, A., Nakai, K., Lysytskij, O., Müller, T., Richter, H., von Ammon, W.

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Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers von Kissinger, G., Dabrowski, J., Sattler, A., Seuring, C., Müller, T., Richter, H., von Ammon, W.

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Modeling the Early Stages of Oxygen Agglomeration von Kissinger, G., Dabrowski, J., Kot, D., Akhmetov, V., Sattler, A., von Ammon, W.

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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals von Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

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Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals von Dornberger, E., Gräf, D., Suhren, M., Lambert, U., Wagner, P., Dupret, F., von Ammon, W.

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Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing von Akhmetov, V., Kissinger, G., von Ammon, W.

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Characterization of crystal quality by crystal originated particle delineation and the impact on the silicon wafer surface von GRÄF, D, SUHREN, M, LAMBERT, U, SCHMOLKE, R, EHLERT, A, VON AMMON, W, WAGNER, P

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Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen von Kissinger, G., Kot, D., von Ammon, W.

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Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations von Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von

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Defect engineering of Czochralski single-crystal silicon von Sinno, T, Dornberger, E, von Ammon, W, Brown, R.A, Dupret, F

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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection von Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., von Ammon, W.

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Defects in silicon crystals and their impact on DRAM device characteristics von DORNBERGER, E, TEMMLER, D, VON AMMON, W

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Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation von Mühe, A., Backofen, R., Fainberg, J., Müller, G., Dornberger, E., Tomzig, E., von Ammon, W.

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An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification von Kissinger, G., Sattler, A., Müller, T., von Ammon, W.

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Modeling of transient point defect dynamics in Czochralski silicon crystals von Dornberger, E., von Ammon, W., Virbulis, J., Hanna, B., Sinno, T.

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth von Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Khodosevitch, K.V., Kalaev, V.V., Makarov, Yu.N., Dornberger, E., Virbulis, J., von Ammon, W.

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Crystal growth melt flow control by means of magnetic fields von Galindo, V., Gerbeth, G., von Ammon, W., Tomzig, E., Virbulis, J.

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