Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior von Karouta, F., Smalbrugge, E., van der Vleuten, W.C., Gaillard, S., Acket, G.A.

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Low-loss low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation von Buda, M., van der Vleuten, W.C., Iordache, Gh, Acket, G.A., van de Roer, T.G., van Es, C.M., van Roy, B.H., Smalbrugge, E.

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Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C von Koenraad, P M, Blom, F A P, Langerak, C J G M, Leys, M R, Perenboom, J A A J, Singleton, J, Spermon, S J R M, Vleuten, W C van der, Voncken, A P J, Wolter, J H

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Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection von Verschaffelt, G., van der Vleuten, W., Creusen, M., Smalbrugge, E., van de Roer, T.G., Karouta, F., Strijbos, R.C., Danckaert, J., Veretennicoff, I., Ryvkin, B., Thienpont, H., Acket, G.A.

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Fröhlich interaction in InAs/GaAs self-assembled quantum dots von Minnaert, A. W. E., Silov, A. Yu, van der Vleuten, W., Haverkort, J. E. M., Wolter, J. H.

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A tunable hot-electron light emitter von Teke, A, Gupta, R, Balkan, N, Vleuten, W van der, Wolter, J H

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Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures von LENSSEN, K.-M. H, MATTERS, M, HARMANS, C. J. P. M, MOOIJ, J. E, LEYS, M. R, VAN DER VLEUTEN, W, WOLTER, J. H

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A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact von Ragay, F.W., Leys, M.R., Nouwens, P.A.M., van der Vleuten, W.C., Wolter, J.H.

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Broadband single-electron tunneling transistor von Visscher, E. H., Lindeman, J., Verbrugh, S. M., Hadley, P., Mooij, J. E., van der Vleuten, W.

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Carrier capture in ultrathin InAs/GaAs quantum wells von Brübach, J., Silov, A. Yu, Haverkort, J. E. M., van der Vleuten, W., Wolter, J. H.

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Magnetic trap for excitons von Christianen, P.C.M, Piazza, F, Lok, J.G.S, Maan, J.C, van der Vleuten, W

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Be Delta-Doped Layers in GaAs Imaged with Atomic Resolution Using Scanning Tunneling Microscopy von Johnson, MB, Koenraad, PM, van der Vleuten WC, Salemink, HW, Wolter, JH

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Photoluminescence study of Si delta-doped GaAs von Henning, J C M, Kessener, Y A R R, Koenraad, P M, Leys, M R, Vleuten, W van der, Wolter, J H, Frens, A M

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Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation von Buda, M., van de Roer, T.G., Kaufmann, L.M.F., Iordache, Gh, Cengher, D., Diaconescu, D., Petrescu-Prahova, I.B., Haverkort, J.E.M., van der Vleuten, W., Wolter, J.H.

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A RHEED study of the dynamics of GaAs and AlGaAs growth on a (001) surface by MBE von Hopkins, J., Leys, M.R., Brübach, J., van der Vleuten, W.C., Wolter, J.H.

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Be delta-doped layers in GaAs studied by scanning tunnelling microscopy von Koenraad, P.M., Johnson, M.B., Salemink, H.W.M., van der Vleuten, W.C., Wolter, J.H.

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Low-voltage hetero-nipi waveguide modulators with GaAs/AlAs quantum wells von YOFFE, G. W, BRÜBACH, J, KAROUTA, F, VAN DER VLEUTEN, W. C, KAUFMANN, L. M. F, WOLTER, J. H

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Electron-phonon coupling in a delta -doped n-i-p structure in GaAs von Henning, JC, de Groote FP, van der Vleuten WC, Wolter, JH

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Influence of gate voltage on the transport properties of superconductor/2DEG systems von Lenssen, K.-M.H., Westerling, L.A., Harmans, C.J.P.M., Mooij, J.E., Leys, M.R., van der Vleuten, W., Wolter, J.H.

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Coupling of ultrathin InAs layers as a tool for band-offset determination von Brübach, J., Silov, A. Yu, Haverkort, J. E. M., Vleuten, W. v. d., Wolter, J. H.

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