Thermal etching of SiC von van der Berg, N.G., Malherbe, Johan B., Botha, A.J., Friedland, E.

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Study of silver diffusion in silicon carbide von Friedland, E., Malherbe, J.B., van der Berg, N.G., Hlatshwayo, T., Botha, A.J., Wendler, E., Wesch, W.

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Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions von Friedland, E., van der Berg, N.G.

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Influence of radiation damage on xenon diffusion in silicon carbide von Friedland, E., Gärtner, K., Hlatshwayo, T.T., van der Berg, N.G., Thabethe, T.T.

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Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding von Friedland, E., van der Berg, N.G., Malherbe, J.B., Hancke, J.J., Barry, J., Wendler, E., Wesch, W.

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Influence of radiation damage on krypton diffusion in silicon carbide von Friedland, E., Hlatshwayo, T.T., van der Berg, N.G., Mabena, M.C.

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Influence of radiation damage on strontium and iodine diffusion in silicon carbide von Friedland, E., van der Berg, N.G., Malherbe, J.B., Wendler, E., Wesch, W.

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Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation von Njoroge, E.G., Theron, C.C., Malherbe, J.B., van der Berg, N.G., Hlatshwayo, T.T., Skuratov, V.A.

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Synergistic effects of iodine and silver ions co-implanted in 6H–SiC von Kuhudzai, R.J., Malherbe, J.B., Hlatshwayo, T.T., van der Berg, N.G., Devaraj, A., Zhu, Z., Nandasiri, M.

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Annealing of silver implanted 6H–SiC and the diffusion of the silver von Hlatshwayo, T.T., Malherbe, J.B., van der Berg, N.G., Prinsloo, L.C., Botha, A.J., Wendler, E., Wesch, W.

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region von Kuhudzai, R.J., Malherbe, J.B., van der Berg, N.G., Hlatshwayo, T.T., Odutemowo, O., Prinsloo, L.C., Buys, A.V., Erasmus, R., Wendler, E.

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SEM analysis of ion implanted SiC von Malherbe, Johan B., van der Berg, N.G., Botha, A.J., Friedland, E., Hlatshwayo, T.T., Kuhudzai, R.J., Wendler, E., Wesch, W., Chakraborty, P., da Silveira, E.F.

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Scanning electron microscopy of the surfaces of ion implanted SiC von Malherbe, Johan B., van der Berg, N.G., Kuhudzai, R.J., Hlatshwayo, T.T., Thabethe, T.T., Odutemowo, O.S., Theron, C.C., Friedland, E., Botha, A.J., Wendler, E.

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Diffusion behavior of cesium in silicon carbide at T>1000°C von Friedland, E., van der Berg, N.G., Hlatshwayo, T.T., Kuhudzai, R.J., Malherbe, J.B., Wendler, E., Wesch, W.

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Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures von Hlatshwayo, T.T., van der Berg, N.G., Msimanga, M., Malherbe, J.B., Kuhudzai, R.J.

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Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C von Hlatshwayo, T.T., Malherbe, J.B., van der Berg, N.G., Botha, A.J., Chakraborty, P.

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Cobalt silicide formation on a Si(100) substrate in the presence of an interfacial (Fe90Zr10) interlayer von Abrass, Hameda A., Theron, C.C., Njoroge, E.G., van der Berg, N.G., Botha, A.J., Yan, X.-L., Terblans, J.J.

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Ion beam analysis of materials in the PBMR reactor von Malherbe, Johan B., Friedland, E., van der Berg, N.G.

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Heat treatment of glassy carbon implanted with cesium at room and high temperatures von Langa, D.F., van der Berg, N.G., Friedland, E., Malherbe, J.B., Botha, A.J., Chakraborty, P., Wendler, E., Wesch, W.

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Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC von Kuhudzai, R.J., van der Berg, N.G., Malherbe, J.B., Hlatshwayo, T.T., Theron, C.C., Buys, A.V., Botha, A.J., Wendler, E., Wesch, W.

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