Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures von Van De Walle, G.F.A., Van Ijzendoorn, L.J., Van Gorkum, A.A., Van Den Heuvel, R.A., Theunissen, A.M.L., Gravesteijn, D.J.

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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy von Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

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Voids in epitaxial silicon films grown under different thermal conditions: void detection by thermal helium desorption von van Veen, A., Reader, A.H., Gravesteijn, D.J., van Gorkum, A.A.

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A study of bubble nucleation in tungsten using thermal desorption spectrometry: Clusters of 2 to 100 helium atoms von Kornelsen, E.V., Van Gorkum, A.A.

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Classical calculations of CV profiles for atomic layer doping structures in silicon von van Gorkum, A.A., Yamaguchi, K.

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Performance and processing line integration of a silicon molecular beam epitaxy system von Van Gorkum, A.A., Van de Walle, G.F.A., Van den Heuvel, R.A., Gravesteijn, D.J., Fredriksz, C.W.

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Influence of layer thickness on nucleation in amorphous silicon thin films von Roorda, S., Kammann, D., Sinke, W.C., van de Walle, G.F.A., van Gorkum, A.A.

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Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layers von Gravesteijn, D.J., Zalm, P.C., van de Walle, G.F.A., Vriezema, C.J., van Gorkum, A.A., van Ijzendoorn, L.J.

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Ge Segregation during molecular beam epitaxial growth of Si 1− xGe x/Si layers von Gravesteijn, D.J., Zalm, P.C., van de Walle, G.F.A., Vriezema, C.J., van Gorkum, A.A., van Ijzendoorn, L.J.

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Diffusion and strain relaxation in Si/Si1−xGex/Si structures studied with Rutherford backscattering spectrometry von van Ijzendoorn, L.J., van de Walle, G.F.A., van Gorkum, A.A., Theunissen, A.M.L., van den Heuvel, R.A., Barrett, J.H.

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Mono- and polycrystalline silicon emitters for bipolar transistors grown by molecular beam epitaxy von Van Gorkum, A.A., Van de Walle, G.F.A., van Den Heuvel, R.A., Josquin, W.J.M.J., Van Dijk, J.

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Germanium diffusion and strain relaxation in Si/Si 1− xGe x/Si structures von Van De Walle, G.F.A., Van Ijzendoorn, L.J., Van Gorkum, A.A., Van Den Heuvel, R.A., Theunissen, A.M.L., Gravesteijn, D.J.

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Diffusion and strain relaxation in Si/Si 1− xGe x/Si structures studied with Rutherford backscattering spectrometry von van Ijzendoorn, L.J., van de Walle, G.F.A., van Gorkum, A.A., Theunissen, A.M.L., van den Heuvel, R.A., Barrett, J.H.

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Quantitative thermal desorption spectrometry of ionically implanted inert gases—I. Fundamental aspects von Gorkum, A.A. van, Kornelsen, E.V.

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Phonons in Si/Ge superlattices: Theory and experiment von Montie, E.A., van de Walle, G.F.A., Gravesteijn, D.J., van Gorkum, A.A., Teesselink, W.J.O.

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A photoluminescence study of Si/Ge superlattices von Montie, E.A., van de Walle, G.F.A., Gravesteijn, D.J., van Gorkum, A.A., Cosman, E.C., Fredriksz, C.W., Bulle-Lieuwma, C.W.T.

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Quantitative thermal desorption spectrometry of ionically implanted inert gases—II. Technical requirements von Kornelsen, E.V., Gorkum, A.A. van

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A new electron spectrometer for depth-selective conversion electron Mössbauer spectroscopy von Van Noort, H.M., Ferguson, F.J., Verwer, C.J.G., Van Gorkum, A.A., Van Laarhoven, J.M.E., Denissen, C.J.M.

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Channeling computations for low energy (25–2500 eV) helium in tungsten von van Gorkum, A.A.

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Enhanced penetration of low energy (25eV–5000eV) helium along the 〈100〉 channel in tungsten von Kornelsen, E.V., Van Gorkum, A.A.

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