New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices von Arreghini, A., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J., van Schaijk, R.

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Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories von Golubović, D.S., Miranda, A.H., Akil, N., van Schaijk, R.T.F., van Duuren, M.J.

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Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier von Golubović, D S, Vianello, E, Arreghini, A, Driussi, F, van Duuren, M J, Akil, N, Selmi, L, Esseni, D

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Long term charge retention dynamics of SONOS cells von Arreghini, A., Akil, N., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J.

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Smart SQUIDs based on relaxation oscillation SQUIDs von van Duuren, M.J., Brons, G.C.S., Flokstra, J., Rogalia, H.

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A 1-MHz low noise preamplifier based on double relaxation oscillation SQUIDs von Hamster, A.W., van Duuren, M.J., Brons, G.C.S., Flokstra, J., Rogalla, H.

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Experimental characterization of statistically independent defects in gate dielectrics-part I: description and validation of the model von Driussi, F., Widdershoven, F., Esseni, D., Selmi, L., van Duuren, M.J.

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Defect generation statistics in thin gate oxides von Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

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Experimental characterization of statistically independent defects in gate dielectrics-part II: experimental results on flash memory arrays von Driussi, F., Widdershoven, F., Esseni, D., Selmi, L., van Duuren, M.J.

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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells von Vianello, E., Driussi, F., Arreghini, A., Palestri, P., Esseni, D., Selmi, L., Akil, N., van Duuren, M.J., Golubovic, D.S.

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Impact of correlated generation of oxide defects on SILC and breakdown distributions von Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

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Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells von Arreghini, A., Driussi, F., Vianello, E., Esseni, D., van Duuren, M.J., Golubovic, D.S., Akil, N., van Schaijk, R.

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Low input coil inductance SQUIDs for cryogenic current comparator applications von Sese, J., Camon, A., Rillio, C., Hiddink, M.G.H., Vargas, L., Van Duuren, M.J., Brons, G.C.S., Flokstra, J., Rogalla, H., Rietveld, G.

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Two-stage amplifier based on a double relaxation oscillation superconducting quantum interference device von Podt, M., van Duuren, M. J., Hamster, A. W., Flokstra, J., Rogalla, H.

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Explanation of SILC Probability Density Distributions With Nonuniform Generation of Traps in the Tunnel Oxide of Flash Memory Arrays von Vianello, E., Driussi, F., Esseni, D., Selmi, L., Widdershoven, F., van Duuren, M.J.

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Multichannel SQUID magnetometry using double relaxation oscillation SQUID's von van Duuren, M.J., Lee, Y.H., Adelerhof, D.J., Kawai, J., Kado, H., Flokstra, J., Rogalla, H.

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Frequency readout of relaxation oscillation superconducting quantum interference devices in the GHz regime von van Duuren, M. J., Adelerhof, D. J., Brons, G. C. S., Kawai, J., Uehara, G., Kado, H., Flokstra, J., Rogalla, H.

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High sensitivity magnetic flux sensors with direct voltage readout: double relaxation oscillation SQUIDs von Adelerhof, D.J., van Duuren, M.J., Flokstra, J., Rogalla, H., Kawai, J., Kado, H.

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The use of (Double) relaxation oscillation SQUIDs as a sensor von van Duuren, M.J., Brons, G.C.S., Kattouw, H.E., Flokstra, J., Rogalla, H.

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Characterization and modeling of long term retention in SONOS non volatile memories von Arreghini, A., Akil, N., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J.

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