Anodic etching of SiC in alkaline solutions von van Dorp, D H, Weyher, J L, Kelly, J J

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Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching von Tseng, Wei-Jhih, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Langer, R, Borghs, G

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Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching von Weyher, J. L, van Dorp, D. H, Conard, T, Nowak, G, Levchenko, I, Kelly, J. J

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Anodic Etching of n‑GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties von Tseng, W. J, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Borghs, G

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Electrochemistry of anodic etching of 4H and 6H–SiC in fluoride solution of pH 3 von van Dorp, D.H., Sattler, J.J.H.B., den Otter, J.H., Kelly, J.J.

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Photoelectrochemistry of 4H–SiC in KOH solutions von van Dorp, D.H., Kelly, J.J.

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Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing von Weyher, J.L., van Dorp, D.H., Kelly, J.J.

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The K2S2O8–KOH photoetching system for GaN von Weyher, J.L., Tichelaar, F.D., van Dorp, D.H, Kelly, J.J., Khachapuridze, A.

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Photoetching Mechanisms of GaN in Alkaline S[sub 2]O[sub 8][sup 2−] Solution von van Dorp, D. H., Weyher, J. L., Kooijman, M. R., Kelly, J. J.

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A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics von Abrenica, G.H.A., Lebedev, M.V., Fingerle, M., Arnauts, S., Calvet, W., Mayer, T., de Gendt, S., van Dorp, D.H.

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Electroless nickel deposition and silicide formation for advanced front side metallization of industrial silicon solar cells von Tous, L., van Dorp, D.H., Russell, R., Das, J., Aleman, M., Bender, H., Meersschaut, J., Opsomer, K., Poortmans, J., Mertens, R.

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Large Area Copper Plated Silicon Solar Cell Exceeding 19.5% Efficiency von Tous, L., Russell, R., Das, J., Labie, R., Ngamo, M., Horzel, J., Philipsen, H., Sniekers, J., Vandermissen, K., van den Brekel, L., Janssens, T., Aleman, M., van Dorp, D.H., Poortmans, J., Mertens, R.

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Electrochemical Growth of Micrometer-Thick Oxide on SiC in Acidic Fluoride Solution von van Dorp, D.H, Kooij, E.S, Arnoldbik, W.M, Kelly, J.J

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Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions von van Dorp, Dennis H., Weinberger, David, Van Wonterghem, Simon, Arnauts, Sophia, Strubbe, Katrien, Holsteyns, Frank, De Gendt, Stefan

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Nanoscale Etching and Reoxidation of InAs von De Gendt, S., Arnauts, S., Holsteyns, F., Cuypers, D., van Dorp, Dennis H., Rip, J.

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Wet Chemical Etching of InP for Cleaning Applications: I. An Oxide Formation/Oxide Dissolution Model von Cuypers, D., De Gendt, S., Arnauts, S., Paulussen, K., van Dorp, D. H.

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Wet Chemical Etching of InP for Cleaning Applications: II. Oxide Removal von van Dorp, D. H., Cuypers, D., Arnauts, S., Moussa, A., Rodriguez, L., De Gendt, S.

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Study of InP Surfaces after Wet Chemical Treatments von Cuypers, D., van Dorp, D. H., Tallarida, M., Brizzi, S., Conard, T., Rodriguez, L. N. J., Mees, M., Arnauts, S., Schmeisser, D., Adelmann, C., De Gendt, S.

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Etching of III-V Materials Determined by ICP-MS with Sub-Nanometer Precision von Rip, J., Cuypers, D., Arnauts, S., Holsteyns, F., van Dorp, D. H., De Gendt, S.

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Wet-Chemical Etching of InGaAs for Advanced CMOS Processing von Dorp, Dennis H. van, Arnauts, S., Cuypers, Daniel, Rip, Jens, Holsteyns, Frank, De Gendt, Stefan

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