Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect von Ortiz, G., Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A. J., Pichler, P., Cristiano, F., Bedel-Pereira, E., Mortet, V.

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Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC von Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.

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The Corporate Governance Scorecard: a tool for the implementation of corporate governance von Strenger, Christian

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Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices von Beltrán, A.M., Duguay, S., Strenger, C., Bauer, A.J., Cristiano, F., Schamm-Chardon, S.

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Use of enzyme-linked immunosorbent assay techniques with cross-reacting human sera in diagnosis of murine typhus and spotted fever von KEYSARY, A, STRENGER, C

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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Burenkov, Alex, Bauer, Anton J., Bedel-Pereira, Elena, Uhnevionak, Viktoryia, Pichler, Peter, Strenger, Christian

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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation von Burenkov, Alex, Bauer, Anton J., Cristiano, Fuccio, Bedel-Pereira, Elena, Uhnevionak, Viktoryia, Pichler, Peter, Ortiz, Guillermo, Mortet, Vincent, Strenger, Christian

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Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs von Mortet, Vincent, Frey, Lothar, Ryssel, Heiner, Burenkov, Alexander, Bauer, Anton J., Bedel-Pereira, Eléna, Ortiz, Guillermo, Uhnevionak, Viktoryia, Pichler, Peter, Cristiano, Fuccio, Strenger, Christian, Erlbacher, Tobias

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Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect von Mortet, Vincent, Uhnevionak, Viktoryia, Burenkov, Alexander, Strenger, Chrisitan, Bedel-Pereira, Eléna, Ortiz, Guillermo, Bauer, Anton J., Pichler, Peter, Cristiano, Fuccio

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Ehrlichiosis associated vasculitis von Pick, N., Potasman, I., Strenger, C., Keysary, A., Schwartz, I.

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NOBROW: Identity Formation in a Fatherless Generation von Strenger, Carlo

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Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation von Strenger, Christian, Uhnevionak, V., Bobo, J.F., Bedel-Pereira, E., Burenkov, A., Cristiano, F., Mortet, V., Bauer, Anton J.

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On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs von Uhnevionak, Viktoryia, Burenkov, Alex, Strenger, Christian, Bauer, Anton, Pichler, Peter

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Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs von Strenger, Christian, Uhnevionak, Viktoryia, Burenkov, Alex, Bauer, Anton, Pichler, Peter, Erlbacher, Tobias, Ryssel, Heiner, Frey, Lothar

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Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets von Mortet, Vincent, Cristiano, Fuccio, Ryssel, Heiner, Strenger, Christian, Bauer, Anton J., Krieger, M., Uhnevionak, Viktoryia, Burenkov, Alex, Bedel-Pereira, Elena

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THE HISTORICITY OF PSYCHOANALYSIS AND GLOBAL CULTURE: Reply to Golland (2005) von Strenger, Carlo

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OF POTHOLES AND BENDS: A Meditation on Psychoanalysis and Motorcycle Riding von Strenger, Carlo

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Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets von Mortet, Vincent, Cristiano, Fuccio, Strenger, Christian, Bauer, Anton J., Uhnevionak, Viktoryia, Pichler, Peter, Burenkov, Alex, Bedel-Pereira, Elena

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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Lefebvre, Mathieu, Ryssel, Heiner, Strenger, Christian, Haeublein, Volker, Bauer, Anton J., Bedel-Pereira, Eléna, Beltran, Ana Maria, Schamm-Chardon, Sylvie, Erlbacher, Tobias

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THE SELF AS PERPETUAL EXPERIMENT: Psychodynamic Comments on Some Aspects of Contemporary Urban Culture von Strenger, Carlo

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