Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure von epkowski, S P, Bardyszewski, W

Volltext

The electron effective mass at the bottom of the GaNAs conduction band von Skierbiszewski, C, Gorczyca, I, Łepkowski, S P, Łusakowski, J, Borysiuk, J, Toivonen, J

Volltext

Magnetoconductance in InN/GaN quantum wells in topological insulator phase von Bardyszewski, W., Rodak, D., epkowski, S. P.

Volltext

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells von epkowski, S awomir P, Bardyszewski, Witold

Volltext

Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field von Suski, T., Łepkowski, S. P., Staszczak, G., Czernecki, R., Perlin, P., Bardyszewski, W.

Volltext

Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures von Anceau, S., Lefebvre, P., Suski, T., Łepkowski, S. P., Teisseyre, H., Dmowski, L. H., Konczewicz, L., Kaminska, A., Suchocki, A., Hirayama, H., Aoyagi, Y.

Volltext

Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells von Suski, T., Teisseyre, H., Łepkowski, S.P., Perlin, P., Kitamura, T., Ishida, Y., Okumura, H., Chichibu, SF

Volltext

Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures von Teisseyre, H., Suski, T., Łepkowski, S.P., Anceau, S., Perlin, P., Lefebvre, P., Kończewicz, L., Hirayama, H., Aoyagi, Y.

Volltext

Large Built-in Electric Field and Its Influence on the Pressure Behavior of the Light Emission from GaN/AlGaN Strained Quantum Wells von Perlin, P., Suski, T., Łepkowski, S.P., Teisseyre, H., Grandjean, N., Massies, J.

Volltext