Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure von Ben Ammar, H., Minj, A., Gamarra, P., Lacam, C., Tordjman, M., di Forte‐Poisson, M. A., Morales, M., Chauvat, M. P., Ruterana, P.

Volltext

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN von Redondo-Cubero, A, Lorenz, K, Gago, R, Franco, N, di Forte Poisson, M-A, Alves, E, Muñoz, E

Volltext

Surface potential of n - and p -type GaN measured by Kelvin force microscopy von Barbet, S., Aubry, R., di Forte-Poisson, M.-A., Jacquet, J.-C., Deresmes, D., Mélin, T., Théron, D.

Volltext

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC von Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A.

Volltext

Thermal oxidation of lattice matched InAlN/GaN heterostructures von Alomari, M., Chuvilin, A., Toth, L., Pecz, B., Carlin, J.-F., Grandjean, N., Gaquière, C., di Forte-Poisson, M.-A., Delage, S., Kohn, E.

Volltext

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Iliopoulos, E., Georgakilas, A., Kominou, P., Guziewicz, M., Kaminska, E., Piotrowska, A., Gaquière, C., Oualli, M., Chartier, E., Morvan, E., Delage, S.

Volltext

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz von Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

Volltext

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures von Bergsten, J, Malmros, A, Tordjman, M, Gamarra, P, Lacam, C, di Forte-Poisson, M-A, Rorsman, N

Volltext

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.

Volltext

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC von Cuerdo, R., Sillero, E., Romero, M.F., Uren, M.J., di Forte Poisson, M.-A., Munoz, E., Calle, F.

Volltext

Fundamentals and practice of metal contacts to wide band gap semiconductor devices von Borysiewicz, M. A., Kamińska, E., Myśliwiec, M., Wzorek, M., Kuchuk, A., Barcz, A., Dynowska, E., di Forte-Poisson, M.-A., Giesen, C., Piotrowska, A.

Volltext

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.

Volltext

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation von CICO, K, GREGUSOVA, D, KUZMIK, J, JURKOVIC, M, ALEXEWICZ, A, DI FORTE POISSON, M.-A, POGANY, D, STRASSER, G, DELAGE, S, FRÖHLICH, K

Volltext

III-Nitrides semiconductor compounds for microwave devices von di Forte-Poisson, M. A., Magis, M., Sarazin, N., Tordjman, M., di Persio, J.

Volltext

Structural characterisation of GaAlN/GaN HEMT heterostructures von Sarazin, N., Durand, O., Magis, M., di Forte Poisson, M.-A., Di Persio, J.

Volltext

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs von Bisi, D., Stocco, A., Rossetto, I., Meneghini, M., Rampazzo, F., Chini, A., Soci, F., Pantellini, A., Lanzieri, C., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A., De Salvador, D., Bazzan, M., Meneghesso, G., Zanoni, E.

Volltext

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs von Rossetto, I., Rampazzo, F., Gerardin, S., Meneghini, M., Bagatin, M., Zanandrea, A., Dua, C., di Forte-Poisson, M.-A., Aubry, R., Oualli, M., Delage, S.L., Paccagnella, A., Meneghesso, G., Zanoni, E.

Volltext

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs von Rossetto, I., Rampazzo, F., Meneghini, M., Silvestri, M., Dua, C., Gamarra, P., Aubry, R., di Forte-Poisson, M.-A., Patard, O., Delage, S.L., Meneghesso, G., Zanoni, E.

Volltext

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Aubry, R., Sarazin, N., Peschang, M., Morvan, E., Delage, S.L., di Persio, J., Quéré, R., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.

Volltext

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors von Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P., Cavallini, A., Cavalcoli, D., Giesen, C., Heuken, M., Trager-Cowan, C.

Volltext