A simplified reactive thermal evaporation method for indium tin oxide electrodes von Belo, G.S., da Silva, B.J.P., de Vasconcelos, E.A., de Azevedo, W.M., da Silva, E.F.

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Polyaniline nanofilms as a monitoring label and dosimetric device for gamma radiation von Laranjeira, J.M.G., Khoury, H.J., de Azevedo, W.M., de Vasconcelos, E.A., da Silva, E.F.

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Potential of a simplified measurement scheme and device structure for a low cost label-free point-of-care capacitive biosensor von de Vasconcelos, Elder A., Peres, Newton G., Pereira, Cintya O., da Silva, Valdinete L., da Silva, Eronides F., Dutra, Rosa F.

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Electrical and microscopic characterization of ZnO films on p-SiC substrates von Felix, J.F., da Silva, E.F., de Vasconcelos, E.A., de Azevedo, W.M.

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A conducting polymer–silicon heterojunction as a new ultraviolet photodetector von Cárdenas, J.R., de Vasconcelos, E.A., de Azevedo, W.M., da Silva, E.F., Pepe, I., da Silva, A. Ferreira, Ribeiro, S. Santedicola, Silva, K. Abreu

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An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution von Costa, U.M.S., Freire, V.N., Malacarne, L.C., Mendes, R.S., Picoli Jr, S., de Vasconcelos, E.A., da Silva Jr, E.F.

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Spectroscopic characteristics of doped nanoporous aluminum oxide von de Azevedo, W.M., de Carvalho, D.D., Khoury, H.J., de Vasconcelos, E.A., da Silva, E.F.

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Photoluminescence characteristics of rare earth-doped nanoporous aluminum oxide von de Azevedo, W.M, de Carvalho, D.D, de Vasconcelos, E.A, da Silva, E.F

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A percolation based dielectric breakdown model with randomic changes in the dielectric constant von Sombra, Sergio S., Costa, Uriel M.S., Freire, Valder N., de Vasconcelos, E.A., da Silva, Eronildes F.

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Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics von da Silva, E.F., de Vasconcelos, E.A., Stošić, B.D.

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The role of multiple damaged layers at the Si/SiO 2 interface on the dielectric breakdown of MOS capacitors von Sombra, S.S., Costa, U.M.S., Freire, V.N., de Vasconcelos, E.A., da Silva, E.F.

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Polyaniline nanofilms as a sensing device for ionizing radiation von Laranjeira, J.M.G, Khoury, H.J, de Azevedo, W.M, de Vasconcelos, E.A, da Silva, E.F

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The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors von SOMBRA, S. S, COSTA, U. M. S, FREIRE, V. N, DE VASCONCELOS, E. A, DA SILVA, E. F

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Time evolution of SiO 2/Si interface defects and dopant passivation in MOS capacitors von da Silva Jr, E.F, de Vasconcelos, E.A, Freire, V.N

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Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors von da Silva Jr, E.F, de Vasconcelos, E.A, Freire, V.N

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Dynamics of SiO 2/SiO x/Si multilayer growth and interfacial effects on silicon quantum well confinement properties von da Silva, E.F, de Vasconcelos, E.A, Stošić, B.D, de Sousa, J.S, Farias, G.A, Freire, V.N

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Dynamics of SiO2/SiOx/Si multilayer growth and interfacial effects on silicon quantum well confinement properties von DA SILVA, E. F, DE VASCONCELOS, E. A, STOSIC, B. D, DE SOUSA, J. S, FARIAS, G. A, FREIRE, V. N

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Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films von de Azevedo, W.M., da Silva, E.F., de Vasconcelos, E.A., Boudinov, H.

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Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties von Anjos, V., Bell, M.J.V., de Vasconcelos, E.A., da Silva, E.F., Andrade, A.A., Franco, R.W.A., Castro, M.P.P., Esquef, I.A., Faria, R.T.

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Statistical analysis of topographic images of nanoporous silicon and model surfaces von da Silva, J.B., de Vasconcelos, E.A., dos Santos, B.E.C.A., Freire, J.A.K., Freire, V.N., Farias, G.A., da Silva, E.F.

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