Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives von Buffolo, M., Favero, D., Marcuzzi, A., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.

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Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy von Piva, F, De Santi, C, Caria, A, Haller, C, Carlin, J F, Mosca, M, Meneghesso, G, Zanoni, E, Grandjean, N, Meneghini, M

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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress von Masin, F., Meneghini, M., Canato, E., De Santi, C., Stockman, A., Zanoni, E., Moens, P., Meneghesso, G.

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Role of defects in the thermal droop of InGaN-based light emitting diodes von De Santi, C., Meneghini, M., La Grassa, M., Galler, B., Zeisel, R., Goano, M., Dominici, S., Mandurrino, M., Bertazzi, F., Robidas, D., Meneghesso, G., Zanoni, E.

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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires von Musolino, M., van Treeck, D., Tahraoui, A., Scarparo, L., De Santi, C., Meneghini, M., Zanoni, E., Geelhaar, L., Riechert, H.

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Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation von De Santi, C., Meneghini, M., Trivellin, N., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E.

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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs von Rossetto, I., Meneghini, M., Tajalli, A., Dalcanale, S., De Santi, C., Moens, P., Banerjee, A., Zanoni, E., Meneghesso, G.

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Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors von de Santi, C., Meneghini, M., Ishida, H., Ueda, T., Meneghesso, G., Zanoni, E.

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Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling von Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., Zanoni, E.

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Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation von De Santi, C., Fregolent, M., Buffolo, M., Wong, M. H., Higashiwaki, M., Meneghesso, G., Zanoni, E., Meneghini, M.

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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process von Renso, N., De Santi, C., Caria, A., Dalla Torre, F., Zecchin, L., Meneghesso, G., Zanoni, E., Meneghini, M.

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Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations von Piva, F., Pilati, M., Buffolo, M., Roccato, N., Susilo, N., Hauer Vidal, D., Muhin, A., Sulmoni, L., Wernicke, T., Kneissl, M., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.

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Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs von Piva, F., Grigoletto, M., Brescancin, R., De Santi, C., Buffolo, M., Ruschel, J., Glaab, J., Hauer Vidal, D., Guttmann, M., Rass, J., Einfeldt, S., Susilo, N., Wernicke, T., Kneissl, M., Meneghesso, G., Zanoni, E., Meneghini, M.

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Study and characterization of GaN MOS capacitors: Planar vs trench topographies von Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., Bakeroot, B., Diehle, P., Altmann, F., Meneghesso, G., Zanoni, E., Meneghini, M.

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Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices von Modolo, N., De Santi, C., Baratella, G., Bettini, A., Borga, M., Posthuma, N., Bakeroot, B., You, S., Decoutere, S., Bevilacqua, A., Neviani, A., Meneghesso, G., Zanoni, E., Meneghini, M.

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Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes von De Santi, C., Meneghini, M., Meneghesso, G., Zanoni, E.

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Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis von Nardo, A, de Santi, C, Carraro, C, Sgarbossa, F, Buffolo, M, Diehle, P, Gierth, S, Altmann, F, Hahn, H, Fahle, D, Heuken, M, Fouchier, M, Gasparotto, A, Napolitani, E, Meneghesso, G, Zanoni, E, Meneghini, M

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Screening medical students for SARS-CoV-2 to facilitate face-to-face clinical teaching and prevent onward spread to patients von De Santi, C., Cavalleri, G.L., Kerrigan, S.W., Fitzpatrick, F., McGrogan, K., Gilroy, J., Baxter, R., Quadu, V., Ryan, K., Humphreys, H.

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Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate von Favero, D., De Santi, C., Nardo, A., Dixit, A., Vanmeerbeek, P., Stockman, A., Tack, M., Meneghesso, G., Zanoni, E., Meneghini, M.

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Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage von De Santi, C., Meneghini, M., Marioli, M., Buffolo, M., Trivellin, N., Weig, T., Holc, K., Köhler, K., Wagner, J., Schwarz, U.T., Meneghesso, G., Zanoni, E.

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