Accuracy of progress ratios determined from experience curves: the case of crystalline silicon photovoltaic module technology development von van Sark, W. G. J. H. M., Alsema, E. A., Junginger, H. M., de Moor, H. H. C., Schaeffer, G. J.

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Passivating TiO 2 coatings for silicon solar cells by pulsed laser deposition von Doeswijk, L.M., de Moor, H.H.C., Blank, D.H.A., Rogalla, H.

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Accuracy of progress ratios determined from experience curves: the case of photovoltaic technology development von van Sark, W.G.J.H.M, Alsema, E.A, Junginger, H.M, de Moor, H.H.C, Schaeffer, G.J

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Near equilibrium growth of silicon by CVD I. The Si-Cl-H system von Bloem, J., Oei, Y.S., De Moor, H.H.C., Hanssen, J.H.L., Giling, L.J.

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Hydrogen and Deuterium in Semi-Crystalline Silicon Wafers and Solar Cells von Schuurmans, F., Algra, E., Steeman, R.A., Michiels, P.-P., Alkemade, P.F.A., Sinke, W.C., Weeber, A.W., de Moor, H.H.C., Verhoef, L.A.

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Adsorption on Si(111) during CVD of silicon from silane: The effect of temperature, bond strength, supersaturation and pressure von Giling, L.J., De Moor, H.H.C., Jacobs, W.P.J.H., Saaman, A.A.

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Antimony, arsenic, phosphorus, and boron autodoping in silicon epitaxy von GRAEF, M. W. M, LEUNISSEN, B. J. H, DE MOOR, H. H. C

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2-D numerical analysis of current collection in silicon solar cells von Burgers, A.R., de Moor, H.H.C., Sinke, W.C., Steeman, R.A.

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Near equilibrium growth of silicon by CVD II. The Si-I-H system von Hanssen, J.H.L., Saaman, A.A., De Moor, H.H.C., Giling, L.J., Bloem, J.

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Low-cost multicrystalline silicon solar modules with 16% encapsulated cell efficiency von Verhoef, L.A., Michiels, P.-P., van Zolingen, R.J.C., de Moor, H.H.C., Burgers, A.R., Steeman, R.A., Sinke, W.C.

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