Impact of Line-Edge Roughness on FinFET Matching Performance von Baravelli, E.., Dixit, A.., Rooyackers, R.., Jurczak, M.., Speciale, N., De Meyer, K..

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Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs von Katti, G., Stucchi, M., De Meyer, K., Dehaene, W.

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VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices von Govoreanu, B., Blomme, P., Rosmeulen, M., Van Houdt, J., De Meyer, K.

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Modeling of uniform switching RRAM devices and impact of critical defects von Subhechha, S., Degraeve, R., Roussel, P., Goux, L., Clima, S., De Meyer, K., Van Houdt, J., Kar, G.S.

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions von Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

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Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance von Baravelli, E., Jurczak, M., Speciale, N., De Meyer, K., Dixit, A.

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Characteristics of cross-sectional atom probe analysis on semiconductor structures von Koelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W.

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The effect of ketamine and D-cycloserine on the high frequency resting EEG spectrum in humans von Nottage, J. F., Gabay, A., De Meyer, K., Herrik, K. F., Bastlund, J. F., Christensen, S. R., Gijsen, S., Mehta, M. A.

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Exploring the limits of stress-enhanced hole mobility von Smith, L., Moroz, V., Eneman, G., Verheyen, P., Nouri, F., Washington, L., Jurczak, M., Penzin, O., Pramanik, D., De Meyer, K.

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Unsupervised Learning of Overlapping Image Components Using Divisive Input Modulation von Spratling, M. W., De Meyer, K., Kompass, R.

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs von Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

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Analysis of the parasitic S/D resistance in multiple-gate FETs von Dixit, A., Kottantharayil, A., Collaert, N., Goodwin, M., Jurczak, M., De Meyer, K.

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Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions von ALIAN, A, BRAMMERTZ, G, HEYNS, M, WALDRON, N, MERCKLING, C, HELLINGS, G, LIN, H. C, WANG, W. E, MEURIS, M, SIMOEN, E, DEMEYER, K

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Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories von Suhane, A., Arreghini, A., Degraeve, R., Van den bosch, G., Breuil, L., Zahid, M.B., Jurczak, M., De Meyer, K., Van Houdt, J.

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Co-designing a data platform to impact nature policy and management: experiences from the Dutch Caribbean von Verweij, P., Cormont, A., Hoetjes, P., de Meyer, K., van Bussel, T., Roosenschoon, O., Henkens, R., Schmidt, A., Janssen, S.

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Study of electrical breakdown and secondary pull-in failure modes for NEM relays von Ramezani, M, Severi, S, Tilmans, H A C, De Meyer, K

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Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime von Henson, W.K., Yang, N., Kubicek, S., Vogel, E.M., Wortman, J.J., De Meyer, K., Naem, A.

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Multi-gate devices for the 32 nm technology node and beyond von COLLAERT, N, DE KEERSGIETER, A, SCHULZ, T, SAN, K. T, SON, N. J, VAN DAL, M. J. H, VERHEYEN, P, VON ARNIM, K, WITTERS, L, DE MEYER, K, BIESEMANS, S, JURCZAK, M, DIXIT, A, FERAIN, I, LAI, L.-S, LENOBLE, D, MERCHA, A, NACKAERTS, A, PAWLAK, B. J, ROOYACKERS, R

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures von Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I., Asenov, A.

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On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n -channel metal-oxide-semiconductor transistors von Simoen, E., Eneman, G., Verheyen, P., Delhougne, R., Loo, R., Meyer, K. De, Claeys, C.

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