Conductive polymer preparation under extreme or non-classical conditions von de Azevedo, W. M., de Barros, R. A., da Silva, E. F.

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A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch von de Vasconcelos, Elder A., da Silva Jr, E. F., dos Santos, B. E. C. A., de Azevedo, W. M., Freire, J. A. K.

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Exciton confinement in InGaN/GaN cylindrical quantum wires von Caetano, E. W. S., Freire, V. N., Farias, G. A., Silva Jr, E. F. da

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Optical band-edge absorption of oxide compound SnO2 von ROMAN, L. S, VALASKI, R, CANESTRARO, C. D, MAGALHAES, E. C. S, PERSSON, C, AHUJA, R, DA SILVA, E. F, PEPE, I, FERREIRA DA SILVA, A

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Interface properties in ZnSe/ZnS based strained superlattices and quantum wells von Maia, F.F., Freire, J.A.K., Freire, V.N., Farias, G.A., da Silva, E.F.

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A simplified reactive thermal evaporation method for indium tin oxide electrodes von Belo, G.S., da Silva, B.J.P., de Vasconcelos, E.A., de Azevedo, W.M., da Silva, E.F.

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Electronic and Optical Properties of TiO2 von da Silva, A Ferreira, Dantas, N Souza, da Silva Jr, E F, Pepe, I, Torres, M O, Persson, C, Lindgren, T, de Almeida, J Souza, Ahuja, R

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Growth of sub-micron fibres of pure polyaniline using the electrospinning technique von Cárdenas, J R, de França, M G O, de Vasconcelos, E A, de Azevedo, W M, da Silva, E F

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Dichotomy of the exciton wave function in semiconductors under intense laser fields von Lima, F. M. S., Nunes, O. A. C., Amato, M. A., Fonseca, A. L. A., da Silva, E. F.

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Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics von PALMIERI, R, BOUDINOV, H, RADTKE, C, DA SILVA, E. F

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Preparation and characterization of conducting polymer/silver hexacyanoferrate nanocomposite von de Azevedo, W.M., de Mattos, I.L., Navarro, M., da Silva, E.F.

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Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations von Leite Alves, H.W., Silva, C.C., Lino, A.T., Borges, P.D., Scolfaro, L.M.R., da Silva, E.F.

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Excitons in type-I type-II strained Si/Si1-xGex graded quantum well von Costa e Silva, J., Freire, J. A. K., Freire, V. N., Farias, G. A., da Silva Jr, E. F.

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Trapping of majority carriers in SiO(2)/4H-SiC structures von Palmieri, R, Radtke, C, Silva, M R, Boudinov, H, Da Silva Jr, E F

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Transverse magneto-conductivity of diluted magnetic semicon-ductor quantum wires von Souto, E., Nunes, O. A. C., Fonseca, A. L. A., Agrello, D. A., da Silva Jr, E. F.

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Relaxation rate of manganese ion in the presence of a two-dimensional electron gas von Souto, E., Nunes, O. A. C., Fonseca, A. L. A., Agrello, D. A., da Silva Jr, E. F.

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Numerical simulation of Si1-xGex/HfO2/Si MOS devices von Costa e Silva, J., de Oliveira, E. L., Freire, J. A. K., de Sousa, J. S., Freire, V. N., Farias, G. A., da Silva Jr, E. F.

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Reliability of MOSFETs as affected by the interface trap transformation process von da Silva, E.F., Nishioka, Y., Kato, M., Ma, T.-P.

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Luminescence studies on nitride quaternary alloys double quantum wells von Rodrigues, S.C.P., dos Santos, O.F.P., Scolfaro, L.M.R., Sipahi, G.M., da Silva, E.F.

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Highly sensitive thermoluminescent carbon doped nanoporous aluminium oxide detectors von de Azevedo, W. M., de Oliveira, G. B., da Silva, E. F., Khoury, H. J., Oliveira de Jesus, E. F.

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