Tuning the polarity of charge transport in InSb nanowires via heat treatment von Hnida, Katarzyna E, Bäβler, Svenja, Akinsinde, Lewis, Gooth, Johannes, Nielsch, Kornelius, Socha, Robert P, aszcz, Adam, Czerwinski, Andrzej, Sulka, Grzegorz D

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Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap von Reckinger, Nicolas, Tang, Xiaohui, Bayot, Vincent, Yarekha, Dmitri A., Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Łaszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J., Raskin, Jean-Pierre

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Deep-ultraviolet Raman investigation of silicon oxide: thin film on silicon substrate versus bulk material von Borowicz, Pawe, Latek, Mariusz, Rzodkiewicz, Witold, aszcz, Adam, Czerwinski, Andrzej, Ratajczak, Jacek

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Erbium Silicide Growth in the Presence of Residual Oxygen von Reckinger, Nicolas, Tang, Xiaohui, Godey, Sylvie, Dubois, Emmanuel, Łaszcz, Adam, Ratajczak, Jacek, Vlad, Alexandru, Duţu, Constantin Augustin, Raskin, Jean-Pierre

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Characterization of ytterbium silicide formed in ultra high vacuum von Łaszcz, A, Ratajczak, J, Czerwinski, A, Kątcki, J, Srot, V, Phillipp, F, Aken, P A van, Yarekha, D, Reckinger, N, Larrieu, G, Dubois, E

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Method for the manufacture of aripiperazole in pharmaceutically useful polymorphic forms von KACZMAREK UKASZ, PITRASZKO ADAM ANDRZEJ, SZELEJEWSKI WIES AW, ASZCZ MARTA

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