Thermal Atomic Layer Etching of ZnO by a “Conversion-Etch” Mechanism Using Sequential Exposures of Hydrogen Fluoride and Trimethylaluminum von Zywotko, David R, George, Steven M

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ZrO2 Monolayer as a Removable Etch Stop Layer for Thermal Al2O3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum von Zywotko, David R, Zandi, Omid, Faguet, Jacques, Abel, Paul R, George, Steven M

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Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging von Zywotko, David R., Faguet, Jacques, George, Steven M.

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Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone von Partridge, Jonathan L., Abdulagatov, Aziz I., Zywotko, David R., George, Steven M.

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ZrO 2 Monolayer as a Removable Etch Stop Layer for Thermal Al 2 O 3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum von Zywotko, David R., Zandi, Omid, Faguet, Jacques, Abel, Paul R., George, Steven M.

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