CALCULATION OF THE HYDRAULIC BOOM LIFTING MECHANISM WHILE LOWERING PROCESS von Zubrilov, G. Yu, Melnikov, V. G., Zeer, V. A., Golubtsov, D. S.

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates von Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates von Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G

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Optically Transparent 6H-Silicon Carbide von Bakin, Andrey, Zubrilov, A.S., Kuznetsov, N.I., Tairov, Yuri M., Dorozhkin, Sergey I.

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Growth and characterization of GaN layers on SiC substrates von Dmitriev, V., Irvine, K., Bulman, G., Edmond, J., Zubrilov, A., Nikolaev, V., Nikitina, I., Tsvetkov, D., Babanin, A., Sitnikova, A., Musikhin, Yu, Bert, N.

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GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine von Antipov, V.G., Guriev, A.I., Elyukhin, V.A., Faleev, N.N., Kudriavtsev, Yu.A., Lebedev, A.B., Shubina, T.V., Zubrilov, A.S., Nikishin, S.A., Temkin, H.

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Gas source molecular beam epitaxy of high quality AlxGa1−xN (0⩽x⩽1) on Si(111) von Nikishin, S., Kipshidze, G., Kuryatkov, V., Choi, K., Gherasoiu, Ìu., Grave de Peralta, L., Zubrilov, A., Tretyakov, V., Copeland, K., Prokofyeva, T., Holtz, M., Asomoza, R., Kudryavtsev, Yu, Temkin, H.

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Gas source molecular beam epitaxy of high quality Al x Ga 1−x N (0⩽x⩽1) on Si(111) von Nikishin, S., Kipshidze, G., Kuryatkov, V., Choi, K., Gherasoiu, Ìu., Grave de Peralta, L., Zubrilov, A., Tretyakov, V., Copeland, K., Prokofyeva, T., Holtz, M., Asomoza, R., Kudryavtsev, Yu, Temkin, H.

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Gas source molecular beam epitaxy of high quality Al sub(x)Ga sub(1-x)N (0 less than or equal to x less than or equal to 1) on Si(111) von Nikishin, S, Kipshidze, G, Kuryatkov, V, Choi, K, Gherasoiu, Iu, Grave De Peralta, L, Zubrilov, A, Tretyakov, V, Copeland, K, Prokofyeva, T, Holtz, M, Asomoza, R, Kudryavtsev, Yu, Temkin, H

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Growth and characterization of GaN layers on SiC substrates von DMITRIEV, V, IRVINE, K, MUSIKHIN, YU, BERT, N, BULMAN, G, EDMOND, J, ZUBRILOV, A, NIKOLAEV, V, NIKITINA, I, TSVETKOV, D, BABANIN, A, SITNIKOVA, A

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