On the laser lift-off of lightly doped micrometer-Thick w-GaN films from substrates via the absorption of IR radiation in sapphire von Voronenkov, V.V, Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Pinchuk, A.V, Zubrilov, A.S, Gorbunov, R.I, Latishev, F.E, Bochkareva, N.I, Lelikov, Y.S, Tarkhin, D.V, Smirnov, A.N, Davydov, V.Y, Sheremetc, I.A, Shreter, Y.G

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates von Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

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On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals von Lebedev, Alexander A., Abramov, Pavel L., Lebedev, Sergey P., Zubrilov, A.S., Bogdanova, Elena V., Seredova, Natasha V., Tregubova, Alla S.

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Properties of Si-Doped GaN Layers Grown by HVPE von Fomin, A.V., Nikolaev, A.E., Nikitina, I.P., Zubrilov, A.S., Mynbaeva, M.G., Kuznetsov, N.I., Kovarsky, A.P., Ber, B.Ja, Tsvetkov, D.V.

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Mechanism of the GaN LED efficiency falloff with increasing current von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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Investigation of n-GaN/p-SiC/n-SiC heterostructures von Lebedev, A.A., Ledyaev, O.Yu, Strel’chuk, A.M., Kuznetsov, A.N., Nikolaev, A.E., Zubrilov, A.S., Volkova, A.A.

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Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions von Kalinina, E.V., Kholujanov, G.F., Zubrilov, A.S., Tsvetkov, D.V., Vatnik, M.P., Soloviev, V.A., Tretjakov, V.D., Kong, H., Dmitriev, V.A.

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GaN p-n Structures Fabricated by Mg Ion Implantation von Kalinina, E.V., Solov’ev, V.A., Zubrilov, A.S., Dmitriev, V.A., Kovarsky, A.P.

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Strain relaxation in GaN layers grown on porous GaN sublayers von Mynbaeva, M, Titkov, A, Kryzhanovski, A, Kotousova, I, Zubrilov, A S, Ratnikov, V V, Davydov, V Yu, Kuznetsov, N I, Mynbaev, K, Tsvetkov, D V, Stepanov, S, Cherenkov, A, Dmitriev, V A

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Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures von Lebedev, Alexander A., Kuznetsov, Alexey N., Nikolaev, A.E., Ledyaev, O. Yu, Cherenkov, A.E., Strel'chuk, Anatoly M., Volkova, A.A., Zubrilov, A.S., Seredova, Natasha V.

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Deep centers and electroluminescence in 4HSiC diodes with a p-type base region von Kuznetsov, N.I., Zubrilov, A.S.

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Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions von Konstantinov, Andrey O., Davydov, D.V., Kalinina, Evgenia V., Kholuyanov, G., Strel'chuk, Anatoly M., Hallén, Anders, Skuratov, V.A., Staňo, J., Zubrilov, A.S., Onushkin, G.

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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC von Nikitina, Irina P., Bratus, V.Ya, Kalinina, Evgenia V., Zubrilov, A.S., Kuznetsov, N.I., Shcheglov, M.P., Tregubova, Alla S.

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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates von Bauman, D., Ivantsov, V., Nikitina, Irina P., Dmitriev, Vladimir, Hofman, D., Morozov, A., Sukhoveyev, V., Rendakova, S.V., Kuznetsov, N.I., Zubrilov, A.S., Vida, György

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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density von Solov'ev, V., Konstantinov, Andrey O., Karlsson, S., Dmitriev, Vladimir, Kalinina, Evgenia V., Hallén, Anders, Rendakova, S.V., Zubrilov, A.S., Kuznetsov, N.I.

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Growth of SiC and GaN on Porous Buffer Layers von Titkov, A., Kotousova, I., Mynbaeva, Marina G., Scheglov, M.P., Dmitriev, Vladimir, Kryganovski, A., Zubrilov, A.S., Stepanov, S., Lebedev, Alexander A., Cherenkov, A.E., Tsvetkov, D., Mynbaev, K., Savkina, N.S., Seredova, Natasha V., Tregubova, Alla S.

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Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure von Ivantsov, V., Nikolaev, V., Nikitina, Irina P., Dmitriev, Vladimir, Bougrov, V., Tsvetkov, D., Sukhoveyev, V., Zubrilov, A.S.

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Optically Transparent 6H-Silicon Carbide von Bakin, Andrey, Zubrilov, A.S., Kuznetsov, N.I., Tairov, Yuri M., Dorozhkin, Sergey I.

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Picosecond time-resolved reflectivity of porous silicon von Bugayev, A.A., Khakhaev, A., Zubrilov, A.S.

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