Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Zubialevich, Vitalii Z., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Shulenkov, Alexei S., Reklaitis, Ignas, Kadys, Arūnas, Malinauskas, Tadas, Nargelas, Saulius, Jarašiūnas, Kęstutis, Žukauskas, Artūras

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al sub(2)O sub(3) epilayers von Lutsenko, Evgenii V, Rzheutski, Mikalai V, Zubialevich, Vitalii Z, Pavlovskii, Viacheslav N, Yablonskii, Gennadii P, Shulenkov, Alexei S, Reklaitis, Ignas, Kadys, Arunas, Malinauskas, Tadas, Nargelas, Saulius, Jarasiunas, Kstutis, ukauskas, Arturas

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Zubialevich, Vitalii Z., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Shulenkov, Alexei S., Reklaitis, Ignas, Kadys, Arūnas, Malinauskas, Tadas, Nargelas, Saulius, Jarašiūnas, Kęstutis, Žukauskas, Artūras

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