Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs von Akhter, M, Pampili, P, Zubialevich, V.Z, Eason, C, Quan, Z.H, Maaskant, P.P, Parbrook, P.J, Corbett, B

Volltext

Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy von Dinh, Duc V., Conroy, M., Zubialevich, V.Z., Petkov, N., Holmes, J.D., Parbrook, P.J.

Volltext

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates von Yablonskii, G.P., Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Shulga, T.S., Stognij, A.I., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

Volltext

Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors von Buckley, Darragh, McNulty, David, Zubialevich, V.Z., Parbrook, Peter J., O'Dwyer, Colm

Volltext

Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films von Buckley, Darragh, McCormack, Robert, McNulty, David, Zubialevich, V.Z., Parbrook, Peter J., O'Dwyer, Colm

Volltext

(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs von Carvajal, Joan J., Mena, Josue, Bilousov, Oleksandr, Martínez, Oscar, Jiménez, Juan, Zubialevich, V.Z., Parbrook, Peter J., Geaney, Hugh, O'Dwyer, Colm, Díaz, Francesc, Aguiló, Magdalena

Volltext

Luminescence Properties of Strained GaN Epilayers and Spatial Configurations of Silicon Impurity and Related Defects von Gurskii, A.L., Lutsenko, E.V., Zelenkovskii, V.M., Bezjazychnaja, T.V., Pavlovskii, V.N., Zubialevich, V.Z., Schineller, B., Schön, O., Yablonskii, G.P., Heuken, M.

Volltext

Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions von Zubialevich, V. Z., Lutsenko, E. V., Danilchyk, A. V., Muravitskaya, E. V., Yablonskii, G. P., Pashaev, A. M., Tagiev, B. G., Tagiev, O. B., Abushov, S. A.

Volltext

Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures von Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Kalisch, H., Szymakowskii, A., Jansen, R.A., Alam, A., Dikme, Y., Schineller, B., Heuken, M.

Volltext

Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates von Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Yablonskii, G.P., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

Volltext

Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films von Buckley, Darragh, McCormack, Robert, McNulty, David, Zubialevich, V.Z., Parbrook, Peter J., O'Dwyer, Colm

Volltext

Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors von Buckley, Darragh, McNulty, David, Zubialevich, V.Z., Parbrook, Peter J., O'Dwyer, Colm

Volltext

Optical Reflectance Spectroscopy of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films von Buckley, Darragh, McCormack, Robert, McNulty, David, Zubialevich, V.Z., Parbrook, Peter J., O'Dwyer, Colm

Volltext

Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE von Gurskii, A.L., Marko, I.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Yablonskii, G.P., Schineller, B., Schön, O., Heuken, M.

Volltext

Cathodoluminscence of barium and calcium thio And selenogallates co-doped with rare-earth elements von Zubialevich, V.N. Pavlovskiy V.Z, Lutsenko, E.V, Yablonskii, G.P, Pashaev, A.M, Tagiev, B.G, Abushov, S.A, Tagiev, O.B

Volltext

Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures von Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Stognij, A.I., Gurskii, A.L., Hryshanau, V.A., Shulenkov, A.S., Yablonskii, G.P., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Dikme, Y., Jansen, R.H., Heuken, M.

Volltext

(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs von Carvajal, Joan J., Mena, Josue, Bilousov, Oleksandr, Martínez, Oscar, Jiménez, Juan, Zubialevich, V.Z., Parbrook, Peter J., Geaney, Hugh, O'Dwyer, Colm, Díaz, Francesc, Aguiló, Magdalena

Volltext

Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm von Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Marko, I.P., Gurskii, A.L., Zubialevich, V.Z., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Heuken, M.

Volltext

High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates von Gurskii, A.L., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Ryabtsev, A.G., Ryabtsev, G.I., Yablonskii, G.P., Dikme, Y., Szymakovski, A., Kalisch, H., Jansen, R.H., Schineller, B., Heuken, M.

Volltext bestellen

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates von Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Ryabtsev, A.G., Ryabtsev, G.I., Yablonskii, G.P., Dikme, Y., Szymakowski, A., Kalisch, H., Jansen, R.H., Schineller, B., Heuken, M.

Volltext bestellen