Activation of buried p-GaN in MOCVD-regrown vertical structures von Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, Xing, Huili Grace

Volltext

Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes von Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace

Volltext

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy von Zongyang Hu, Nomoto, Kazuki, Meng Qi, Wenshen Li, Mingda Zhu, Xiang Gao, Jena, Debdeep, Xing, Huili Grace

Volltext

Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy von Cho, YongJin, Hu, Zongyang, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep

Volltext

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon von Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, Xing, Huili Grace

Volltext

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz von Yuanzheng Yue, Zongyang Hu, Jia Guo, Sensale-Rodriguez, B., Guowang Li, Ronghua Wang, Faria, F., Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Kosel, T., Snider, G., Fay, P., Jena, D., Huili Xing

Volltext

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors von Ganguly, Satyaki, Konar, Aniruddha, Hu, Zongyang, Xing, Huili, Jena, Debdeep

Volltext

Gallium nitride tunneling field-effect transistors exploiting polarization fields von Chaney, Alexander, Turski, Henryk, Nomoto, Kazuki, Hu, Zongyang, Encomendero, Jimy, Rouvimov, Sergei, Orlova, Tatyana, Fay, Patrick, Seabaugh, Alan, Xing, Huili Grace, Jena, Debdeep

Volltext

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy von Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, Jena, Debdeep

Volltext

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV von Nomoto, Kazuki, Li, Wenshen, Song, Bo, Hu, Zongyang, Zhu, Mingda, Qi, Meng, Protasenko, Vladimir, Zhang, Zexuan, Pan, Ming, Gao, Xiang, Marchand, Hugues, Johnson, Wayne, Jena, Debdeep, Xing, Huili Grace

Volltext

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts von Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Jena, Debdeep, Xing, Huili Grace

Volltext

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes von Fabris, Elena, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo, De Santi, Carlo, Caria, Alessandro, Nomoto, Kazuki, Hu, Zongyang, Li, Wenshen, Gao, Xiang, Jena, Debdeep, Xing, Huili Grace

Volltext

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2 von Li, Wenshen, Hu, Zongyang, Nomoto, Kazuki, Zhang, Zexuan, Hsu, Jui-Yuan, Thieu, Quang Tu, Sasaki, Kohei, Kuramata, Akito, Jena, Debdeep, Xing, Huili Grace

Volltext

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors von Hu, Zongyang, Nomoto, Kazuki, Li, Wenshen, Zhang, Zexuan, Tanen, Nicholas, Thieu, Quang Tu, Sasaki, Kohei, Kuramata, Akito, Nakamura, Tohru, Jena, Debdeep, Xing, Huili Grace

Volltext

Low temperature AlN growth by MBE and its application in HEMTs von Faria, Faiza Afroz, Nomoto, Kazuki, Hu, Zongyang, Rouvimov, Sergei, (Grace) Xing, Huili, Jena, Debdeep

Volltext

Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz von Ronghua Wang, Guowang Li, Karbasian, G., Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Xing, H. G.

Volltext

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms von Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, Xing, Huili Grace

Volltext

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs von Ronghua Wang, Guowang Li, Verma, J., Sensale-Rodriguez, B., Tian Fang, Jia Guo, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing

Volltext

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates von Bo Song, Sensale-Rodriguez, Berardi, Ronghua Wang, Jia Guo, Zongyang Hu, Yuanzheng Yue, Faria, Faiza, Schuette, Michael, Ketterson, Andrew, Beam, Edward, Saunier, Paul, Xiang Gao, Shiping Guo, Fay, Patrick, Jena, Debdeep, Xing, Huili Grace

Volltext

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts von Guowang Li, Ronghua Wang, Jia Guo, Verma, J., Zongyang Hu, Yuanzheng Yue, Faria, F., Yu Cao, Kelly, M., Kosel, T., Huili Xing, Jena, D.

Volltext