Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride von Zomer, P. J., Guimarães, M. H. D., Brant, J. C., Tombros, N., van Wees, B. J.

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Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field von Guimarães, M H D, Zomer, P J, Ingla-Aynés, J, Brant, J C, Tombros, N, van Wees, B J

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Spin Transport in High-Quality Suspended Graphene Devices von Guimarães, Marcos H. D, Veligura, A, Zomer, P. J, Maassen, T, Vera-Marun, I. J, Tombros, N, van Wees, B. J

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Temperature dependent transport characteristics of graphene/n-Si diodes von Parui, S., Ruiter, R., Zomer, P. J., Wojtaszek, M., van Wees, B. J., Banerjee, T.

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A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride von Zomer, P. J., Dash, S. P., Tombros, N., van Wees, B. J.

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Quantum Hall transport as a probe of capacitance profile at graphene edges von Vera-Marun, I. J., Zomer, P. J., Veligura, A., Guimarães, M. H. D., Visser, L., Tombros, N., van Elferen, H. J., Zeitler, U., van Wees, B. J.

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Spin-Dependent Quantum Interference in Nonlocal Graphene Spin Valves von Guimarães, M. H. D, Zomer, P. J, Vera-Marun, I. J, van Wees, B. J

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24 − μ m spin relaxation length in boron nitride encapsulated bilayer graphene von Ingla-Aynés, J., Guimarães, M. H. D., Meijerink, R. J., Zomer, P. J., van Wees, B. J.

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Long-distance spin transport in high-mobility graphene on hexagonal boron nitride von Zomer, P. J., Guimarães, M. H. D., Tombros, N., van Wees, B. J.

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Electronic spin transport in graphene field-effect transistors von Popinciuc, M., Józsa, C., Zomer, P. J., Tombros, N., Veligura, A., Jonkman, H. T., van Wees, B. J.

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Spin transport in graphene nanostructures von Guimarães, M. H. D., van den Berg, J. J., Vera-Marun, I. J., Zomer, P. J., van Wees, B. J.

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Linear scaling between momentum and spin scattering in graphene von Józsa, C., Maassen, T., Popinciuc, M., Zomer, P. J., Veligura, A., Jonkman, H. T., van Wees, B. J.

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Temperature dependent transport characteristics of graphene/n-Si diodes von Parui, S, Ruiter, R, Zomer, P J, Wojtaszek, M, van Wees, B J, Banerjee, T

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Spin transport in graphene nanostructures von Guimaraes, M H D, J J van den Berg, Vera-Marun, I J, Zomer, P J, van Wees, B J

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Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field von Guimarães, M H D, Zomer, P J, Ingla-Aynés, J, Brant, J C, Tombros, N, van Wees, B J

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Spin dependent quantum interference in non-local graphene spin valves von Guimaraes, M H D, Zomer, P J, Vera-Marun, I J, van Wees, B J

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Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride von Zomer, P J, Guimarães, M H D, Brant, J C, Tombros, N, van Wees, B J

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Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride von Zomer, P J, Guimarães, M H D, Tombros, N, van Wees, B J

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A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride von Zomer, P J, Dash, S P, Tombros, N, van Wees, B J

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Spin transport in high quality suspended graphene devices von Guimarães, M H D, Veligura, A, Zomer, P J, Maassen, T, Vera-Marun, I J, Tombros, N, van Wees, B J

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